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15N60HS 데이터시트 PDF




Infineon에서 제조한 전자 부품 15N60HS은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 15N60HS 자료 제공

부품번호 15N60HS 기능
기능 High Speed IGBT
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15N60HS 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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15N60HS 데이터시트, 핀배열, 회로
SGB15N60HS
^
High Speed IGBT in NPT-technology
30% lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
VCE
IC
Eoff
Tj
SGB15N60HS
600V 15A 200µJ 150°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature (reflow soldering, MSL1)
Marking
Package
G15N60HS PG-TO-263-3-2
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj ,Tstg
Tj(tl)
-
Value
600
27
15
60
60
±20
±30
10
138
-55...+150
175
245
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev 2.3 Oct 06
Free Datasheet http://www.datasheet4u.com/




15N60HS pdf, 반도체, 판매, 대치품
SGB15N60HS
^
60A
50A TC=80°C
40A
30A TC=110°C
20A Ic
10A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency
(Tj 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 23)
tP=5µs
8µs
15µs
10A
50µs
200µs
1A 1ms
DC
0,1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj 150°C;VGE=15V)
140W
120W
100W
80W
60W
40W
20W
0W
25°C
50°C
75°C 100°C 125°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 150°C)
20A
10A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 150°C)
Power Semiconductors
4
Rev 2.3 Oct 06

4페이지










15N60HS 전자부품, 판매, 대치품
SGB15N60HS
^
*) Eon include losses
due to diode recovery
2,0mJ
1,0mJ
Ets*
Eon*
Eoff
*) Eon include losses
due to diode recovery
1,0 mJ
0,5 mJ
Ets*
Eon*
Eoff
0,0mJ
0A
10A 20A 30A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=23,
Dynamic test circuit in Figure E)
0,0 mJ
0Ω 10Ω 20Ω 30Ω 40Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
*) Eon include losses
due to diode recovery
0.75mJ
0.50mJ Ets*
0.25mJ
Eon*
Eoff
0.00mJ
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=20A, RG=23,
Dynamic test circuit in Figure E)
100K/W
D=0.5
0.2
10-1K/W 0.1
0.05
0.02
1 0 -2K /W
0.01
R,(1/W)
0.5321
0.2047
0.1304
0.0027
τ, (s)
0.04968
2.58*10-3
2.54*10-4
3.06*10-4
1 0 -3K /W
single pulse
R1 R2
C1=τ1/R1 C2=τ2/R2
1 0 -4K /W
1µs
10µs 100µs 1ms 10ms 100ms
1s
tP, PULSE WIDTH
Figure 16. IGBT transient thermal resistance
(D = tp / T)
Power Semiconductors
7
Rev 2.3 Oct 06

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15N60HS

High Speed IGBT

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