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부품번호 | NJW21194G 기능 |
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기능 | (NJW21193G / NJW21194G) Silicon Power Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 7 페이지수
NJW21193G (PNP)
NJW21194G (NPN)
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
PD
250 Vdc
400 Vdc
5.0 Vdc
400 Vdc
16 Adc
30 Adc
5.0 Adc
200 W
1.6 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
− 65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Symbol
RqJC
RqJA
Max
0.625
40
Unit
°C/W
°C/W
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16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
MARKING
4 DIAGRAM
TO−3P
CASE 340AB
STYLES 1,2,3
NJW2119xG
AYWW
1 23
x
G
A
Y
WW
12 3
= 3 or 4
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW21193G
NJW21194G
Package
TO−3P
(Pb−Free)
TO−3P
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 1
1
Publication Order Number:
NJW21193/D
NJW21193G (PNP) NJW21194G (NPN)
3.0
2.5 TJ = 25°C
IC/IB = 10
2.0
1.5
TYPICAL CHARACTERISTICS
PNP NJW21193G
1.4
1.2 TJ = 25°C
IC/IB = 10
1.0
0.8
0.6
NPN NJW21194G
VBE(sat)
1.0
0.5
0
0.1
VBE(sat)
VCE(sat)
1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
100
0.4
0.2
0
0.1
VCE(sat)
1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
100
10
TJ = 25°C
PNP NJW21193G
10
TJ = 25°C
NPN NJW21194G
VCE = 20 V (SOLID)
1.0
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
1.0
VCE = 5 V (DASHED)
0.1
0.1
1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
100
PNP NJW21193G
100
10 mSec 100 mSec
10
1 Sec
1.0
0.1
0.1
1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base−Emitter Voltage
100
NPN NJW21194G
100
10 mSec
100 mSec
10
1 Sec
1.0
0.1
1.0
10
100 1000
VCE, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
0.1
1.0
10
100 1000
VCE, COLLECTOR EMITTER (VOLTS)
Figure 14. Active Region Safe Operating Area
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4
4페이지 NJW21193G (PNP) NJW21194G (NPN)
PACKAGE DIMENSIONS
TO−3P−3LD
CASE 340AB−01
ISSUE A
BB
C
Q
4
AL
(3°)
PK
123
G
3X D
0.25 M A B S
G
A
SEATING
PLANE
E
HF
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
U 2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 19.70 19.90 20.10
B 15.40 15.60 15.80
C 4.60 4.80 5.00
D 0.80 1.00 1.20
E 1.45 1.50 1.65
F 1.80 2.00 2.20
G 5.45 BSC
H 1.20 1.40 1.60
J 0.55 0.60 0.75
K 19.80 20.00 20.20
L 18.50 18.70 18.90
P 3.30 3.50 3.70
W Q 3.10 3.20 3.50
U 5.00 REF
W 2.80 3.00 3.20
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION
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7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NJW21193/D
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NJW21194G | (NJW21193G / NJW21194G) Silicon Power Transistors | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |