Datasheet.kr   

NJW21194G 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 NJW21194G은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 NJW21194G 자료 제공

부품번호 NJW21194G 기능
기능 (NJW21193G / NJW21194G) Silicon Power Transistors
제조업체 ON Semiconductor
로고 ON Semiconductor 로고


NJW21194G 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

NJW21194G 데이터시트, 핀배열, 회로
NJW21193G (PNP)
NJW21194G (NPN)
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
CollectorEmitter Voltage 1.5 V
Collector Current Continuous
Collector Current Peak (Note 1)
Base Current Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
PD
250 Vdc
400 Vdc
5.0 Vdc
400 Vdc
16 Adc
30 Adc
5.0 Adc
200 W
1.6 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
JunctiontoCase
Thermal Resistance,
JunctiontoAmbient
Symbol
RqJC
RqJA
Max
0.625
40
Unit
°C/W
°C/W
http://onsemi.com
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
MARKING
4 DIAGRAM
TO3P
CASE 340AB
STYLES 1,2,3
NJW2119xG
AYWW
1 23
x
G
A
Y
WW
12 3
= 3 or 4
= PbFree Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW21193G
NJW21194G
Package
TO3P
(PbFree)
TO3P
(PbFree)
Shipping
30 Units/Rail
30 Units/Rail
© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 1
1
Publication Order Number:
NJW21193/D




NJW21194G pdf, 반도체, 판매, 대치품
NJW21193G (PNP) NJW21194G (NPN)
3.0
2.5 TJ = 25°C
IC/IB = 10
2.0
1.5
TYPICAL CHARACTERISTICS
PNP NJW21193G
1.4
1.2 TJ = 25°C
IC/IB = 10
1.0
0.8
0.6
NPN NJW21194G
VBE(sat)
1.0
0.5
0
0.1
VBE(sat)
VCE(sat)
1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
100
0.4
0.2
0
0.1
VCE(sat)
1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
100
10
TJ = 25°C
PNP NJW21193G
10
TJ = 25°C
NPN NJW21194G
VCE = 20 V (SOLID)
1.0
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
1.0
VCE = 5 V (DASHED)
0.1
0.1
1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical BaseEmitter Voltage
100
PNP NJW21193G
100
10 mSec 100 mSec
10
1 Sec
1.0
0.1
0.1
1.0 10
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Typical BaseEmitter Voltage
100
NPN NJW21194G
100
10 mSec
100 mSec
10
1 Sec
1.0
0.1
1.0
10
100 1000
VCE, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
0.1
1.0
10
100 1000
VCE, COLLECTOR EMITTER (VOLTS)
Figure 14. Active Region Safe Operating Area
http://onsemi.com
4

4페이지










NJW21194G 전자부품, 판매, 대치품
NJW21193G (PNP) NJW21194G (NPN)
PACKAGE DIMENSIONS
TO3P3LD
CASE 340AB01
ISSUE A
BB
C
Q
4
AL
(3°)
PK
123
G
3X D
0.25 M A B S
G
A
SEATING
PLANE
E
HF
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
U 2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 19.70 19.90 20.10
B 15.40 15.60 15.80
C 4.60 4.80 5.00
D 0.80 1.00 1.20
E 1.45 1.50 1.65
F 1.80 2.00 2.20
G 5.45 BSC
H 1.20 1.40 1.60
J 0.55 0.60 0.75
K 19.80 20.00 20.20
L 18.50 18.70 18.90
P 3.30 3.50 3.70
W Q 3.10 3.20 3.50
U 5.00 REF
W 2.80 3.00 3.20
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NJW21193/D

7페이지


구       성 총 7 페이지수
다운로드[ NJW21194G.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
NJW21194G

(NJW21193G / NJW21194G) Silicon Power Transistors

ON Semiconductor
ON Semiconductor

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵