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PDF SW840A Data sheet ( Hoja de datos )
| Número de pieza | SW840A | |
| Descripción | N-channel MOSFET | |
| Fabricantes | SAMWIN | |
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SAMWIN
SW840A
N-channel MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 0.85Ω)@VGS=10V
■ Gate Charge (Typ 35nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220
1
2
3
BVDSS : 500V
ID : 8.5A
RDS(ON) : 0.85ohm
2
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to
DC converter block, high efficiency switch mode power supplies, power factor
correction, electronic lamp ballast based on half bridge.
1
3
Order Codes
Item
1
Sales Type
SW P 840A
Marking
SW840A
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
(note 1)
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 3)
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Value
500
8.5
5.5
34
± 30
790
13.7
5.0
125
1.1
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
Min. Typ. Max.
Unit
1.0 oC/W
0.5 oC/W
62.5
oC/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7
Free Datasheet http://www.datasheet4u.com/
1 page  
SAMWIN
SW840A
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
1mA
VGS
VDS
DUT
VGS
QGS
QG
QGD
Charge
Fig. 13. Switching time test circuit & waveform
RG
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
10VIN
RG
L
IAS
VDS
DUT
VDD
BVDSS
IAS
EAS =
1
2 L X IAS2 X
BVDSS
BVDSS - VDD
ID(t)
tp
VDS(t)
time
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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