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Datasheet SW8N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SW8N60N-channel MOSFET

SAMWIN SW8N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID : 7.5A RDS(ON) : 1.3ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General Descri
SAMWIN
SAMWIN		mosfet


SW8 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1SW80N08AMOSFET, Transistor

SAMWIN SW80N08A N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max9.2mΩ)@VGS=10V ■ Gate Charge (Typical 82nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced V
SEMIPOWER
SEMIPOWER		mosfet
2SW80N08BMOSFET, Transistor

SAMWIN SW80N08B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max8.5mΩ)@VGS=10V ■ Gate Charge (Typical 72nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced V
SEMIPOWER
SEMIPOWER		mosfet
3SW80x8-SPST Switches

B O WEI BOWEI INTEGRATED CIRCUITS CO.,LTD. 8-SPST Switches SW80x Features ●Compact ●Low metal package insertion Loss.High isolation ●Fast switching speed ●Removable SMA Connectors ●Operating temperature range:-45℃～+85℃ Specifications(VCC=+5V, Vee=-5V ) Parameter Frequency range
BOWEI
BOWEI		data
4SW830N-Channel MOSFET

SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4 ohm : 5.0 A : 28 nc : 73 W SW830 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET
SAMWIN
SAMWIN		mosfet
5SW830AN-channel MOSFET

SAMWIN SW830A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.5 Ω)@VGS=10V ■ Gate Charge (Typ 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 BVDSS : 500V ID : 5.5A RDS(ON) : 1.5ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General Descri
SAMWIN
SAMWIN		mosfet
6SW840N-Channel MOSFET

SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 0.85 ohm : 8.5 A : 36 nc : 125 W SW840 This power MOSFET is produced with advanced VDMOS process, planar stripe. This technology enable power MOSFET to
SAMWIN
SAMWIN		mosfet
7SW840AN-channel MOSFET

SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 0.85Ω)@VGS=10V ■ Gate Charge (Typ 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 SW840A N-channel MOSFET BVDSS : 500V ID : 8.5A RDS(ON) : 0.85ohm 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOS
SAMWIN
SAMWIN		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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