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PDF UMD3N Data sheet ( Hoja de datos )
| Número de pieza | UMD3N | |
| Descripción | Multi-Chip Digital Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
UMD3N
NPN-PNP built-in resistors
Multi-Chip Digital Transistor
Features
.055(1.40)
.047(1.20)
6 54
SOT-363
.026TYP
(0.65TYP)
.021REF
(0.525)REF
8o
0o
* DTA114E and DTC114E transistors are
built-in a SOT-363 package.
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
MARKING:D3
(3) (2) (1)
R1 R2
DT r2
DT r1
R2 R1
(4) (5) (6)
R1=R2=10K
.096(2.45)
.085(2.15)
123
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
.043(1.10)
.035(0.90)
.053(1.35)
.045(1.15)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
Input voltage
VIN
Output current
IO
IC(MAX)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25℃)
50
-10~40
50
100
150(TOTAL)
150
-55~150
V
V
mA
mW
℃
℃
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
Input voltage
VI(off)
VI(on)
3
0.5
V
VCC=5V ,IO=100μA
VO=0.3V ,IO=10mA
Output voltage
VO(on)
0.3 V
IO/II=10mA/0.5mA
Input current
II
0.88 mA
VI=5V
Output current
IO(off)
0.5 µA
VCC=50V, VI=0
DC current gain
GI 30
VO=5V,IO=5mA
Input resistance
R1 7 10 13 KΩ
Resistance ratio
R2/R1
0.8
1
1.2
Transition frequency
fT
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
Free Datasheet http://wwPwa.gdaeta1shoefe2t4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet UMD3N.PDF ] | |
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