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PDF UMD6N Data sheet ( Hoja de datos )
| Número de pieza | UMD6N | |
| Descripción | Dual NPN+PNP Digital Transistors | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
UMD6N
Dual NPN+PNP Digital Transistors
(Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
DTA143T(PNP) and DTC143T(NPN) transistors
are built-in a package.
Transistor elements are independent, eliminating
interference.
Mounting cost and area can be cut in half.
SOT-363
A
E
L
EQUIVALENT CIRCUIT
B
F CH
DG K J
MARKING：D6
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00
2.15
1.15
2.20
2.45
1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Value
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction & Storage temperature
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
PC
TJ, TSTG
50
50
5
100
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Symbol
Min.
Typ.
Max. Unit Test Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
50
50
-
-
- IC= 50A
V
- IC= 1mA
Emitter-base breakdown voltage
V(BR)EBO
5
-
- V IE= 50A
Collector cut-off current
ICBO
-
- 0.5 A VCB= 50V
Emitter cut-off current
IEBO
-
- 0.5 A VEB= 4V
Collector-emitter saturation voltage
VCE(sat)
-
- 0.3 V IC= 5mA, IB= 0.25mA
DC current transfer ratio
hFE 100 - 600
VCE= 5V, IC= 1mA
Input resistance
R1 3.29 4.7 6.11 K
Transition frequency
fT
-
250
-
MHz
VCE= 10V, IE= -5mA,
f=100MHz
http://www.SeCoSGmbH.com/
30-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
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| Páginas | Total 2 Páginas | |
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