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TLP1032F 데이터시트 PDF




Toshiba에서 제조한 전자 부품 TLP1032F은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 TLP1032F 자료 제공

부품번호 TLP1032F 기능
기능 PHOTOINTERRUPTER INFRARED LED PHOTO IC
제조업체 Toshiba
로고 Toshiba 로고


TLP1032F 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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TLP1032F 데이터시트, 핀배열, 회로
TLP1032(F), TLP1033A(F)
TOSHIBA Photointerrupter Infrared LED + Photo IC
TLP1032(F), TLP1033A(F)
Lead(Pb)-Free
Domestic electrical appliances such as VTRs and
CD players
Office equipment such as photocopiers, printers
and fax machines
Vending machines
Position detectors
The TLP1032(F)/TLP1033A(F) is a high-withstanding-voltage
photo-interrupter for digital output. The device combines a
high-optical-output GaAs infrared LED with a high-sensitivity,
high-gain Si photo-IC. The photo-IC, which supports a wide range of
systems (3.3 V to 12 V), enables the device to consume less power
than conventional devices. The device also features a narrow slit
width and high resolution.
The short lead package allows automatic mounting.
Designed for direct mounting on printed circuit boards
(positioning pins included)
The short lead package allows automatic mounting:
Lead length of 3.4 ± 0.3 mm
Permissible board thickness: 1.6 mm or less
Gap: 5 mm
Resolution: Slit width of 0.5 mm
Digital output (open-collector)
TLP1032(F) : Low-level output at shielding
TLP1033A(F): High-level output at shielding
Direct connection to logic IC
Power supply voltage: VCC = 2.7 V~15 V
High-speed response
Detector impermeable to visible light
Package material: Polybutylene-terephthalate (UL94V-0, black)
TOSHIBA
Weight: 0.6 g (typ.)
11-14G1
1 2007-10-01
Free Datasheet http://www.datasheet4u.com/




TLP1032F pdf, 반도체, 판매, 대치품
TLP1032(F), TLP1033A(F)
Note 3: The switching time measurement circuit and waveform are as follows:
TLP1032(F)
Constant-voltage
circuit
IF
Amp
VCC = 3.3 V
RL
VOUT
IF
tpLH
VOUT
tr
50%
tpHL
90% VOH
tf
10%
1.5 V
VOL
TLP1033A(F)
Constant-voltage
circuit
IF
Amp
VCC = 3.3 V
RL
VOUT
IF
tpHL
VOUT
tf
50%
tpLH
90% VOH
tr
10%
1.5 V
VOL
Markings
Monthly lot number
Month of manufacture (January to December denoted by the letters A to L respectively)
Year of manufacture (the last digit of the year of manufacture)
Precautions
When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse the
entire package in the cleaning solvent. Chemical residue on the LED emitter or the photodetector inside the photo-IC
case may adversely affect the optical characteristics of the device and may drastically reduce the threshold input
current.
The case is made of polybutylene-terephthalate. Oil or chemicals may cause the package to melt or crack. Care
should be taken regarding the environment in which the device is to be installed.
Mount the device on a level surface.
Output fluctuates for 100 μs after power-on while the internal circuit stabilizes.
To stabilize the power line, insert a bypass capacitor of up to 0.01 μF between VCC and GND, close to the device.
The threshold input current increases over time due to current flowing in the infrared LED. The design of circuits that
are to incorporate the device must take into account the change in threshold input current over time. The change in
threshold input current is equal to the reciprocal of the change in LED infrared optical output.
IFHL (t)
IFHL (0)
=
⎜⎜⎝⎛
PO (t)
PO (0)
⎟⎟⎠⎞
1
Choose a high-quality shutter material that is impermeable to light. If the material is of inferior quality, light from the
LED may pass through the shutter, causing the device to malfunction.
4 2007-10-01

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TLP1032F 전자부품, 판매, 대치품
TLP1032(F) Detection position
characteristic (1)
1.2
(typ.)
1.0
0.8
0.6
0.4
0.2
0
0.4
0.2
Ta = 25°C
VCC = 3.3 V
RL = 10 kΩ
IF = 20 mA
0
d
+
Shutter
Detection position
d = 0 ± 0.3 mm
0 0.2 0.4 0.6
Distance d (mm)
0.8
TLP1033A(F) Detection position
characteristic (1)
1.2
(typ.)
1.0
0.8
0.6
0.4
0.2
0
0.4
0.2
Ta = 25°C
VCC = 3.3 V
RL = 10 kΩ
IF = 20 mA
0
d
+
Shutter
Detection position
d = 0 ± 0.3 mm
0 0.2 0.4 0.6
Distance d (mm)
0.8
TLP1032(F), TLP1033A(F)
TLP1032(F) Detection position
characteristic (2)
1.2
(typ.)
1.0
Ta = 25°C
VCC = 3.3 V
0.8 RL = 10 kΩ
IF = 20 mA
Shutter
0.6
0.4 d
0.2 Detection position
d
=
7.95
+1.25
1.35
mm
0
7.0 7.2 7.4 7.6 7.8 8.0 8.2
Distance d (mm)
TLP1033A(F) Detection position
characteristic (2)
1.2
(typ.)
1.0
Ta = 25°C
VCC = 3.3 V
0.8 RL = 10 kΩ
IF = 20 mA
Shutter
0.6
0.4 d
0.2 Detection position
d
=
7.95
+1.25
1.35
mm
0
7.0 7.2 7.4 7.6 7.8 8.0 8.2
Distance d (mm)
7 2007-10-01

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