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FGA30N65SMD 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FGA30N65SMD은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 FGA30N65SMD 기능
기능 Field Stop IGBT
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FGA30N65SMD 데이터시트, 핀배열, 회로
July 2013
FGA30N65SMD
650 V, 30 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Induction Heating
• Telecom, ESS
General Description
Using novel field stop IGBT technology, Fairchild®’s new series
of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder, induction heating, tele-
com, ESS and PFC applications where low conduction and
switching losses are essential.
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
1
C
G
E
Ratings
650
20
30
60
30
90
40
20
120
300
150
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/




FGA30N65SMD pdf, 반도체, 판매, 대치품
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
90
TC = 25oC
75
20V
15V
12V
10V
60
45
30
VGE = 8V
15
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
90
Common Emitter
75
VGE = 15V
TC = 25oC
60 TC = 175oC
45
30
15
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.0
Common Emitter
VGE = 15V
3.5
60A
3.0
2.5
30A
2.0
IC = 15A
1.5
1.0
25
50 75 100 125 150
Case Temperature, TC [oC]
175
Figure 2. Typical Output Characteristics
90
TC = 175oC
75
20V
15V
12V
10V
60
45
30 VGE = 8V
15
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
90
Common Emitter
VCE = 20V
75 TC = 25oC
TC = 175oC
60
45
30
15
0
0 2 4 6 8 10 12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
15
30A
IC = 15A
10
Common Emitter
TC = -40oC
60A
5
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
4
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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FGA30N65SMD 전자부품, 판매, 대치품
Typical Performance Characteristics
Figure 19. Current Derating
80
Common Emitter
VGE = 15V
60
40
20
0
25 50 75 100 125 150 175
Case Temperature, TC [oC]
Figure 21. Load Current Vs. Frequency
350
300
Square Wave
TJ < 175oC, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 6
250
200
150
TC = 100oC
100
TC = 75oC
TC = 25oC
50
0
1k 10k 100k
Switching Frequency, f [Hz]
1M
Figure 23. Reverse Current
1000
100 TJ = 175oC
10
1
0.1
0.01
50
TJ = 100oC
TJ = 25oC
200 400
Reverse Voltage, VR [V]
600
Figure 20. Power Dissipation
300
Common Emitter
250 VGE = 15V
200
150
100
50
0
25 50 75 100 125 150 175
Case Temperature, TC [oC]
Figure 22. Forward Characteristics
60
TJ = 175oC
10
TJ = 25oC
TJ = 100oC
1
0.1
0
123
Forward Voltage, VF [V]
4
Figure 24. Reverse Recovery Current
8
6
di/dt = 200A/s
4
di/dt = 100A/s
2
TC = 25oC
TC = 175oC
0
5 10 15 20 25 30 35 40
Forward Current, IF [A]
©2013 Fairchild Semiconductor Corporation
FGA30N65SMD Rev. C2
7
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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FGA30N65SMD

Field Stop IGBT

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