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PDF FGH50T65UPD Data sheet ( Hoja de datos )
| Número de pieza | FGH50T65UPD | |
| Descripción | Field Stop Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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April 2013
FGH50T65UPD
650 V, 50 A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 50 A
• 100% of Parts Tested ILM(2)
• High Input Impedance
• Tightened Parameter Distribution
• RoHS Compliant
• Short-circuit Ruggedness > 5us @25oC
General Description
Using innovative field stop trench IGBT technology, Fairchild®’s
new series of field stop trench IGBTs offer optimum perfor-
mance for solar inverter, UPS, welder, and digital power genera-
tor where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Digital Power Generator
• Telecom, ESS
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
ILM (2)
IF
IFM(1)
PD
SCWT
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Clamped Inductive Load Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2: Ic = 150A, Vce = 400V, Rg = 10Ω
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
Thermal Resistance, Junction to Case
RθJC(Diode) Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
FGH50T65UPD Rev. C0
1
C
G
E
Ratings
650
± 25
100
50
150
150
60
30
150
340
170
5
-55 to +175
-55 to +175
300
Unit
V
V
A
A
A
A
A
A
A
W
W
us
oC
oC
oC
Typ.
-
-
-
Max.
0.44
1.2
40
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
50A 100A
4
IC = 25A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Capacitance Characteristics
30000
Cies
1000
Common Emitter
100 VGE = 0V, f = 1MHz
TC = 25oC
30
1 10
Collector-Emitter Voltage, VCE [V]
Coes
Cres
30
Figure 11. SOA Characteristics
1000
100 10μs
100μs
1ms
10 ms
10 DC
1
*Notes:
0.1 1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
0.1 1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 175oC
16
12
8
50A
100A
4
IC = 25A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
200V
300V
VCC = 400V
9
6
3
0
0 50 100 150 200 250
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
1000
100
10
1
0
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 50A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
©2012 Fairchild Semiconductor Corporation
FGH50T65UPD Rev. C0
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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