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PDF HITK0303MP Data sheet ( Hoja de datos )

Número de pieza HITK0303MP
Descripción Silicon N Channel MOS FET Power Switching
Fabricantes Renesas 
Logotipo Renesas Logotipo



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HITK0303MP
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 42 mtyp (VGS = 10 V, ID = 1.8 A)
Low drive current
High speed switching
4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “MG”.
Preliminary Datasheet
R07DS0484EJ0100
Rev.1.00
Jun 22, 2011
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(Pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 40 1 mm)
Ratings
30
20
3.7
5
3.7
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
C
C
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Page 1 of 6
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HITK0303MP pdf
HITK0303MP
Dynamic Input Characteristics
100
ID = 3.7 A
Tc = 25°C
80
20
16
60
40
VDS
20
0
02
VDD =10 V
12
25 V
VGS 8
VDD = 25 V
10 V
4 68
4
0
10
Gate Charge Qg (nC)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
VGS = 0 V
f = 1 MHz
10
0 5 10
Crss
15 20 25
30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
5
4 VGS = 10 V
Pulse Test
Tc = 25°C
3 5V
0 V, –5 V, –10 V
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Preliminary
1000
Switching Characteristics
tf
100
td(off)
td(on)
10 tr
1
0.01 0.1
VDD = 10 V
VGS = 10 V
Rg = 4.7 Ω
PW = 5 μs
Tc = 25°C
1 10
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
800
750
700
650
600
–10
–5
VDS = 0 V
f = 1 MHz
0 5 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.9
VGS = 0
0.8
0.7 ID = 10 mA
0.6
0.5
1 mA
0.4
0.3
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Page 5 of 6
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