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PDF AUIRFSL3107 Data sheet ( Hoja de datos )

Número de pieza AUIRFSL3107
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! AUIRFSL3107 Hoja de datos, Descripción, Manual

AUTOMOTIVE GRADE
PD - 96394A
AUIRFS3107
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Enhanced dV/dT and dI/dT capability
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
AUIRFSL3107
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
75V
2.5m:
3.0m:
c230A
S ID (Package Limited) 195A
DD
S
G
D2Pak
AUIRFS3107
S
GD
TO-262
AUIRFSL3107
GD S
Absolute Maximum Ratings
Gate
D ra in
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
™230
160
195
900
370
2.5
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
ÃdAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
± 20
300
See Fig. 14, 15, 22a, 22b
14
-55 to + 175
300
V
mJ
A
mJ
V/ns
°C
Parameter
klRθJC Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.dat1a1sh/1e/e1t14u.com/

1 page




AUIRFSL3107 pdf
1000
TJ = 175°C
100
10 TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
250
LIMITED BY PACKAGE
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
4.0
3.0
2.0
1.0
0.0
0
20 40 60
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
80
AUIRFS/SL3107
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
10msec
LIMITED BY PACKAGE
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10 100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
100
ID = 5mA
90
80
70
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP 21A
49A
BOTTOM 140A
800
600
400
200
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5
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AUIRFSL3107 arduino
AUIRFS/SL3107
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/

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