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PDF AUIRFSL8403 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFSL8403 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
AUIRFS8403
AUIRFSL8403
Features
HEXFET® Power MOSFET
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
G
D VDSS
RDS(on) typ.
max.
S ID (Silicon Limited)
40V
2.6mΩ
3.3mΩ
123A
DD
S
G
S
D
G
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l DC-DC Converter
D2Pak
AUIRFS8403
TO-262
AUIRFSL8403
G
Gate
D
Drain
S
Source
Ordering Information
Base part number
AUIRFSL8403
AUIRFS8403
Package Type
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Quantity
50
50
Complete Part Number
AUIRFSL8403
A UIRFS8403
Tape and Reel Left
800
A UIRFS8403TRL
Tape and Reel Right
800
A UIRFS8403TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
EAS (tested)
IAR
EAR
dSingle Pulse Avalanche Energy
jSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
Repetitive Avalanche Energy
Thermal Resistance
123
87
492
99
0.66
± 20
-55 to + 175
300
111
160
See Fig. 14, 15 , 24a, 24b
A
W
W/°C
V
°C
mJ
A
mJ
RθJC
RθJA
Symbol
Parameter
iJunction-to-Case
Junction-to-Ambient (PCB Mount) D2 Pak
Typ.
–––
–––
Max.
1.52
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
May 08 2013
Free Datasheet http://www.datasheet4u.com/
1 page  
AUIRFS/SL8403
10
1
0.1
0.01
0.001
1E-006
1000
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart = 25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
120 Notes on Repetitive Avalanche Curves , Figures 14, 15
TOP
Single Pulse
(For further info, see AN-1005 at www.irf.com)
BOTTOM 1.0% Duty Cycle
1. Avalanche failures assumption:
ID = 70A
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
80 3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
40
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5 www.irf.com © 2013 International Rectifier
May 08 2013
Free Datasheet http://www.datasheet4u.com/
5 Page 
AUIRFS/SL8403
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
May 08 2013
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRFSL8403.PDF ] | |
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