AUIRL3705ZL Datasheet PDF - International Rectifier
| Part Number | AUIRL3705ZL | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | International Rectifier | |
| Logo |  |
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AUTOMOTIVE GRADE
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
G
PD - 96345
AUIRL3705Z
AUIRL3705ZS
AUIRL3705ZL
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) typ. 6.5mΩ
max. 8.0mΩ
lS ID (Silicon Limited) 86A
ID (Package Limited) 75A
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
TO-220AB
AUIRL3705Z
D2Pak
TO-262
AUIRL3705ZS AUIRL3705ZL
Absolute Maximum Ratings
G
Gate
D
Drain
S
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (Tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy(Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
kJunction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
Max.
86l
61
75
340
130
0.88
± 16
120
180
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.14
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www1.d2a/0ta9s/h1e0et4u.com/
|
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100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRL3705Z/S/L
6.0
ID= 52A
5.0
4.0
VDS= 44V
VDS= 28V
VDS= 11V
3.0
2.0
1.0
0.0
0
10 20 30
QG Total Gate Charge (nC)
40
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.0
VGS = 0V
0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
2.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AUIRL3705ZL electronic component. |
| Information | Total 15 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ AUIRL3705ZL.PDF Datasheet ] | |
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