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PDF AUIRLL014N Data sheet ( Hoja de datos )
| Número de pieza | AUIRLL014N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD- 97755
AUIRLL014N
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide
variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max. 0.14
S ID
2.0A
G
Gate
D
S
D
G
SOT-223
AUIRLL014N
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
Parameter
hContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
hPower Dissipation (PCB Mount)
gPower Dissipation (PCB Mount)
gLinear Derating Factor (PCB Mount)
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
ÃAvalanche Current
gRepetitive Avalanche Energy
Max.
2.8
2.0
1.6
16
2.1
1.0
8.3
± 16
32
2.0
0.1
Units
A
W
mW/°C
V
mJ
A
mJ
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
gRJA Junction-to-Ambient (PCB mount, steady state)
hRJA Junction-to-Ambient (PCB mount, steady state)
-55 to + 150
Typ.
90
50
Max.
120
60
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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1 page  
AUIRLL014N
400
V
C
GS
iss
=
=
0V,
Cgs
f = 1MHz
+ Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
300 Ciss
200 Coss
100 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
20 ID = 2.0A
16
V DS = 44V
V DS = 28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0A
0 3 6 9 12 15
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.4
VGS = 0V A
0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10μs
10
100μs
1ms
1
10ms
TTAJ
= 25°C
= 150°C
Single Pulse
0.1
1
10
A
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
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5 Page 
AUIRLL014N
Ordering Information
Base part Package Type
AUIRLL014N
SOT-223
Standard Pack
Form
Tube
Tape and Reel
Quantity
95
2500
Complete Part Number
AUIRLL014N
AUIRLL014NTR
www.irf.com
11
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11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRLL014N.PDF ] | |
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