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PDF AUIRLL024Z Data sheet ( Hoja de datos )

Número de pieza AUIRLL024Z
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! AUIRLL024Z Hoja de datos, Descripción, Manual

PD - 97762
AUTOMOTIVE GRADE
AUIRLL024Z
Features
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) typ.
48m
max. 60m
S ID
5.0A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
G
Gate
D
S
D
G
SOT-223
AUIRLL024Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
iContinuous Drain Current, VGS @ 10V
iContinuous Drain Current, VGS @ 10V
™Pulsed Drain Current
iPower Dissipation
jPower Dissipation
iLinear Derating Factor
5.0
4.0 A
40
2.8
1.0 W
0.02 W/°C
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
± 16
21
38
See Fig.12a, 12b, 15, 16
V
mJ
A
mJ
TJ Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Thermal Resistance
°C
Parameter
Typ.
Max.
Units
iRJA Junction-to-Ambient (PCB mount, steady state)
–––
jRJA Junction-to-Ambient (PCB mount, steady state)
–––
45 °C/W
120
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
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AUIRLL024Z pdf
AUIRLL024Z
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
6.0
ID= 3.0A
5.0 VDS= 44V
VDS= 28V
4.0 VDS= 11V
3.0
2.0
1.0
0.0
0
1234567
QG Total Gate Charge (nC)
8
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1
0
0.0
VGS = 0V
0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
3.0
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100μsec
1
0.1
1msec
0.01 DC 10msec
0.001
TA = 25°C
Tj = 150°C
Single Pulse
0.0001
0.1 1.0
10
100
VDS, Drain-to-Source Voltage (V)
1000.0
nce
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
www.irf.com
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AUIRLL024Z arduino
AUIRLL024Z
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2.05 (.080)
TR 1.95 (.077)
4.10 (.161)
3.90 (.154)
FEED DIRECTION
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
1.85 (.072)
1.65 (.065)
0.35 (.013)
0.25 (.010)
7.55 (.297)
7.45 (.294)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
7.10 (.279)
6.90 (.272)
16.30 (.641)
15.70 (.619)
2.30 (.090)
2.10 (.083)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
3
18.40 (.724)
MAX.
4
www.irf.com
11
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