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PDF AUIRLR024N Data sheet ( Hoja de datos )
| Número de pieza | AUIRLR024N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD- 96348
AUIRLR024N
Features
l Advanced Planar Technology
l Low On-Resistance
l Logic-Level Gate Drive
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRLU024N
HEXFET® Power MOSFET
D V(BR)DSS
55V
G RDS(on) max. 0.065Ω
S ID
17A
D
D
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
S
D
G
D-Pak
AUIRLR024N
S
D
G
I-Pak
AUIRLU024N
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
ÃAvalanche Current
Repetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB mount) **
RθJA Junction-to-Ambient
Max.
17
12
72
45
0.3
± 16
68
11
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://w0w1w/1.8d/a1t1asheet4u.com/
1 page  
800
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
600 Ciss Coss = Cds + C gd
400 Coss
200 Crss
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
AUIRLR/U024N
15 I D = 11A
12
VDS = 44V
VDS = 28V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 4 8 12 16 20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 175°C
10
TJ = 25°C
1 VGS = 0V A
0.4 0.8 1.2 1.6 2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
10 100µs
STTCJing==le
25°C
175°C
Pulse
1
1ms
10ms A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
AUIRLR/U024N
TR
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
www.irf.com
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRLR024N.PDF ] | |
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