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부품번호 | AUIRLR2905Z 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 13 페이지수
AUTOMOTIVE GRADE
PD - 97583
Features
● Logic Level
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava-
lanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
AUIRLR2905Z
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) max. 13.5mΩ
G
ID (Silicon Limited)
60A
S ID (Package Limited) 42A
D
G
Gate
S
G
D-Pak
AUIRLR2905Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
EAS
EAS (tested )
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
Max.
60
43
42
240
110
0.72
± 16
57
85
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.38
40
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datas1h0e/e2t8h/2tt0p1:/0/www.datasheet4u.com/
AUIRLR2905Z
1000
100
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
10
1
0.1
≤ 60µs PULSE WIDTH
3.0V Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
1000
100
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
10 3.0V
1
0.1
≤ 60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
100.0
TJ = 25°C
TJ = 175°C
10.0
1.0
2.0
VDS = 10V
≤ 60µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
60
50
40
30
20
10
0
0
TJ = 175°C
TJ = 25°C
VDS = 8.0V
380µs PULSE WIDTH
10 20 30 40
ID, Drain-to-Source Current (A)
50
Fig 3. Typical Transfer Characteristics
4
Fig 4. Typical Forward Transconductance
Vs. Drain Current
www.irf.com
Free Datasheet http://www.datasheet4u.com/
4페이지 AUIRLR2905Z
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
15V
DRIVER
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
240
ID
200
TOP 36A
6.2A
BOTTOM 4.3A
160
120
80
40
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
3.0
2.5
2.0 ID = 250µA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
7
Free Datasheet http://www.datasheet4u.com/
7페이지 | |||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AUIRLR2905 | Power MOSFET ( Transistor ) | Infineon |
AUIRLR2905 | HEXFET Power MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |