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부품번호 | AUIRLS4030 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 13 페이지수
AUTOMOTIVE GRADE
PD - 96406B
AUIRLS4030
Features
AUIRLSL4030
l Optimized for Logic Level Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ. 3.4mΩ
G max. 4.3mΩ
S ID
180A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
GDS
D2Pak
AUIRLS4030
GDS
TO-262
AUIRLSL4030
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
dGate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
ikRθJC
Junction-to-Case
jRθJA Junction-to-Ambient (PCB Mount) , D2Pak
Max.
180
130
730
370
2.5
± 16
305
See Fig. 14, 15, 22a, 22b,
21
-55 to + 175
300
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.da1t1a/s1h7e/e1t14u.com/
AUIRLS/SL4030
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
10
1
0.1
2.5V
≤60μs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
TJ = 25°C
10
VDS = 50V
≤60μs PULSE WIDTH
1.0
12345
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.5V
10
0.1
≤60μs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
2.5
ID = 110A
2.0 VGS = 10V
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
5.0
ID= 110A
4.0
VDS= 80V
VDS= 50V
3.0
2.0
1.0
0.0
0
20 40 60 80 100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
Free Datasheet http://www.datasheet4u.com/
4페이지 AUIRLS/SL4030
2.5
2.0
1.5
ID = 250μA
1.0 ID = 1.0mA
ID = 1.0A
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
40
IF = 73A
35 VR = 85V
30 TJ = 25°C
TJ = 125°C
25
20
15
10
5
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
35
IF = 110A
30 VR = 85V
25
TJ = 25°C
TJ = 125°C
20
15
10
5
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
800
720
IF = 73A
VR = 85V
640 TJ = 25°C
560 TJ = 125°C
480
400
320
240
160
80
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
www.irf.com
880
800 IF = 110A
720
VR = 85V
TJ = 25°C
640 TJ = 125°C
560
480
400
320
240
160
80
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
7
Free Datasheet http://www.datasheet4u.com/
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부품번호 | 상세설명 및 기능 | 제조사 |
AUIRLS4030 | Power MOSFET ( Transistor ) | Infineon |
AUIRLS4030 | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |