AUIRLS4030-7P Datasheet PDF - International Rectifier
| Part Number | AUIRLS4030-7P | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | International Rectifier | |
| Logo |  |
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AUTOMOTIVE GRADE
PD - 96399A
AUIRLS4030-7P
Features
l Optimized for Logic Level Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
3.2mΩ
G max. 3.9mΩ
S ID
190A
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
Absolute Maximum Ratings
G
Gate
S
SS
S
S
G
D2Pak 7 Pin
AUIRLS4030-7P
D
Drain
S
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
190
130 A
750
370 W
Linear Derating Factor
2.5 W/°C
VGS
EAS
IAR
EAR
dv/dt
dGate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
cAvalanche Current
fRepetitive Avalanche Energy
ePeak Diode Recovery
± 16
320
See Fig. 14, 15, 22a, 22b
13
V
mJ
A
mJ
V/ns
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300
°C
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
x x10lbf in (1.1N m)
Avalanche Characteristics
Thermal Resistance
Parameter
jkRθJC Junction-to-Case
ijRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datasheet http://www.da1t1a/s1h7e/e1t14u.com/
|
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1000
TJ = 175°C
100
10 TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
200
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-20 0 20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
AUIRLS4030-7P
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10 10msec
1msec
DC
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP 12A
16A
BOTTOM 110A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
Free Datasheet http://www.datasheet4u.com/
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| Information | Total 12 Pages | |
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