Datasheet.kr   

PBSS4230PANP 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PBSS4230PANP은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 PBSS4230PANP 자료 제공

부품번호 PBSS4230PANP 기능
기능 NPN/PNP low VCEsat (BISS) transistor
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


PBSS4230PANP 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 21 페이지수

미리보기를 사용할 수 없습니다

PBSS4230PANP 데이터시트, 핀배열, 회로
PBSS4230PANP
30 V, 2 A NPN/PNP low VCEsat (BISS) transistor
14 December 2012
Product data sheet
1. General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
IC collector current
ICM peak collector current single pulse; tp ≤ 1 ms
TR1 (NPN)
RCEsat
collector-emitter
saturation resistance
IC = 1 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 30 V
- - 2A
- - 3A
- - 145 mΩ
Scan or click this QR code to view the latest information for this product
Free Datasheet http://www.datasheet4u.com/




PBSS4230PANP pdf, 반도체, 판매, 대치품
NXP Semiconductors
1.5
(1)
Ptot
(W)
1.0
(2)
(3) (4)
(5)
0.5 (6)
(7)
(8)
PBSS4230PANP
30 V, 2 A NPN/PNP low VCEsat (BISS) transistor
006aad165
0
-75 -25
25
75
Fig. 1.
(1) 4-layer PCB 70 µm, mounting pad for collector 1 cm2
(2) FR4 PCB 70 µm, mounting pad for collector 1 cm2
(3) 4-layer PCB 70 µm, standard footprint
(4) 4-layer PCB 35 µm, mounting pad for collector 1 cm2
(5) FR4 PCB 35 µm, mounting pad for collector 1 cm2
(6) 4-layer PCB 35 µm, standard footprint
(7) FR4 PCB 70 µm, standard footprint
(8) FR4 PCB 35 µm, standard footprint
Per transistor: power derating curves
125 175
Tamb (°C)
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] - - 338 K/W
[2] - - 219 K/W
[3] - - 236 K/W
[4] - - 179 K/W
[5] - - 278 K/W
[6] - - 164 K/W
[7] - - 179 K/W
[8] - - 86 K/W
- - 30 K/W
PBSS4230PANP
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 December 2012
© NXP B.V. 2012. All rights reserved
4 / 21
Free Datasheet http://www.datasheet4u.com/

4페이지










PBSS4230PANP 전자부품, 판매, 대치품
NXP Semiconductors
PBSS4230PANP
30 V, 2 A NPN/PNP low VCEsat (BISS) transistor
103 006aad169
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.33
0.5
0.2
0.1
10
0.05
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
4-layer PCB 35 µm, mounting pad for collector 1 cm2
1
10 102 103
tp (s)
Fig. 5. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
103 006aac610
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
10
0.02
0.05
0.01
0
1
10- 5
10- 4
10- 3
10- 2
FR4 PCB 70 µm, standard footprint
10- 1
1
10 102 103
tp (s)
Fig. 6. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4230PANP
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 December 2012
© NXP B.V. 2012. All rights reserved
7 / 21
Free Datasheet http://www.datasheet4u.com/

7페이지


구       성 총 21 페이지수
다운로드[ PBSS4230PANP.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
PBSS4230PAN

NPN/NPN low VCEsat (BISS) transistor

NXP Semiconductors
NXP Semiconductors
PBSS4230PANP

NPN/PNP low VCEsat (BISS) transistor

NXP Semiconductors
NXP Semiconductors

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵