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기능 Automotive N-Channel MOSFET
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SQ2308ES 데이터시트, 핀배열, 회로
SQ2308ES
Vishay Siliconix
Automotive
N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TO-236
(SOT-23)
60
0.155
0.205
2.3
Single
D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualifiedc
• Find out more about Vishay’s Automotive
Grade Product Requirements at:
www.vishay.com/applications
G1
S2
3D
G
Top View
SQ2308ES (8J)*
* Marking Code
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
S
N-Channel MOSFET
SOT-23
SQ2308ES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationa
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
60
± 20
2.3
1.4
2.5
9
11
6
2
0.6
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mountb
SYMBOL
RthJA
RthJF
LIMIT
175
75
UNIT
°C/W
Document Number: 65353
S10-2109-Rev. B, 27-Sep-10
www.vishay.com
1
This datasheet has been downloaded from http://www.digchip.com at thisFrpeeaDgaetasheet http://www.datasheet4u.com/




SQ2308ES pdf, 반도체, 판매, 대치품
SQ2308ES
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5 100
ID = 2 A
2.1 VGS = 10 V
10
1.7 1
TJ = 150 °C
1.3 0.1
TJ = 25 °C
0.9 0.01
0.5
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1.0
0.001
0.0
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.5
0.5
0.8 0.2
0.6
0.4
TJ = 150 °C
0.2
TJ = 25 °C
0.0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
85
ID = 1 mA
81
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 μA
- 1.0
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
77
73
69
www.vishay.com
4
65
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 65353
S10-2109-Rev. B, 27-Sep-10
Free Datasheet http://www.datasheet4u.com/

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SQ2308ES 전자부품, 판매, 대치품
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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SQ2308ES

Automotive N-Channel MOSFET

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