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PDF MMBZ18VCL Data sheet ( Hoja de datos )
| Número de pieza | MMBZ18VCL | |
| Descripción | (MMBZxxVCL / MMBZxxVDL) Double ESD protection diodes | |
| Fabricantes | NXP Semiconductors | |
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MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage
suppression
Rev. 01 — 3 September 2008
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
cathode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1. Product overview
Type number[1]
Package
NXP
MMBZ12VDL
SOT23
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
JEDEC
TO-236AB
[1] All types available as /DG halogen-free version.
Configuration
dual common cathode
1.2 Features
I Unidirectional ESD protection of
I ESD protection up to 30 kV (contact
two lines
discharge)
I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD)
I Low diode capacitance: Cd ≤ 140 pF I IEC 61643-321
I Rated peak pulse power: PPPM ≤ 40 W I AEC-Q101 qualified
I Ultra low leakage current: IRM ≤ 5 nA
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Automotive electronic control units
I Portable electronics
Free Datasheet http://www.datasheet4u.com/
1 page  
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
Table 8. ESD standards compliance
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
150
IPP
(%)
100
100 % IPP; 10 µs
006aab319
IPP
100 %
90 %
001aaa631
50 % IPP; 1000 µs
50
0
0 1.0 2.0 3.0 4.0
tp (ms)
Fig 1. 10/1000 µs pulse waveform according to
IEC 61643-321
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
6. Thermal characteristics
Table 9. Thermal characteristics
Symbol Parameter
Conditions
Per device
Rth(j-a)
thermal resistance from junction in free air
to ambient
Rth(j-sp)
thermal resistance from junction
to solder point
Min Typ Max Unit
[1] - - 350 K/W
[2] - - 280 K/W
[3] - - 60 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point at pin 3.
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Rev. 01 — 3 September 2008
© NXP B.V. 2008. All rights reserved.
5 of 15
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5 Page 
NXP Semiconductors
10. Package outline
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
2.5 1.4
2.1 1.2
3.0
2.8
3
1.1
0.9
0.45
0.15
1
Dimensions in mm
1.9
Fig 10. Package outline SOT23 (TO-236AB)
2
0.48
0.38
0.15
0.09
04-11-04
11. Packing information
Table 11. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
MMBZ12VDL
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
MMBZ12VDL/DG
MMBZ15VDL/DG
MMBZ18VCL/DG
MMBZ20VCL/DG
MMBZ27VCL/DG
MMBZ33VCL/DG
SOT23
SOT23
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
Packing quantity
3 000
10 000
-215
-235
-215
-235
[1] For further information and the availability of packing methods, see Section 15.
MMBZXVCL_MMBZXVDL_SER_1
Product data sheet
Rev. 01 — 3 September 2008
© NXP B.V. 2008. All rights reserved.
11 of 15
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| PDF Descargar | [ Datasheet MMBZ18VCL.PDF ] | |
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