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PDF AP6680GM Data sheet ( Hoja de datos )
| Número de pieza | AP6680GM | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP6680GM
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
▼ High Vgs Max Rating Voltage
▼ Surface Mount Package
Description
D
D
D
D
SO-8
G
S
S
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
30V
11mΩ
11.5A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
30
± 25
11.5
9.5
50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
50
Unit
℃/W
Data and specifications subject to change without notice
200902302
Free Datasheet http://www.datasheet4u.com/
1 page  
AP6680GM
15
I D =11.5A
V DS =15V
12
9
6
3
0
0 10 20 30 40
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
1000
Coss
Crss
100
10
1
7 13 19 25 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
10 2.5
Tj=150 o C
1
Tj=25 o C
2
1.5
0.1
0
0.4 0.8 1.2
V SD (V)
1.6
Fig 11. Forward Characteristic of
Reverse Diode
1
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP6680GM.PDF ] | |
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