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부품번호 | DHG30I1200HA 기능 |
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기능 | Sonic Fast Recovery Diode | ||
제조업체 | IXYS | ||
로고 | |||
전체 4 페이지수
DHG 30 I 1200 HA
Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DHG 30 I 1200 HA
3
1
VRRM =
IFAV =
t rr =
1200 V
30 A
200 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package:
● Housing: TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
Symbol
VRRM
IR
VF
IFAV
VF0
rF
R thJC
T VJ
Ptot
I FSM
I RM
t rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
VR = 1200 V
VR = 1200 V
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
rectangular
d = 0.5
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
t = 10 ms (50 Hz), sine
IF = 30 A; VR = 600 V
-diF/dt = 600 A/µs
CJ junction capacitance
VR = 600 V; f = 1 MHz
TVJ = 25 °C
TVJ = 25°C
TVJ = 125 °C
TVJ = 25°C
TVJ = 125°C
TC = 90°C
TVJ = 150 °C
TC = 25°C
TVJ = 45°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25°C
min. typ. max.
1200
50
0.5
1.95 2.26
3.00
1.95 2.27
3.20
30
1.25
30
0.70
-55 150
180
200
23
30
200
350
11
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110510a
Free Datasheet http://www.datasheet4u.com/
60
50
40
IF
30
[A]
20
10
TVJ = 125°C
TVJ = 25°C
0
0.0 0.5 1.0 1.5 2.0 2.5
VF [V]
Fig. 1 Typ. Forward current versus VF
3.0
70
60
50
IRR 40
[A] 30
TVJ = 125°C
VR = 600 V
60 A
30 A
15 A
20
10
0
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
Fig. 3 Typ. peak reverse current IRM vs. di/dt
2.0
TVJ = 125°C
VR = 600 V
1.6
Erec 1.2
[mJ]
0.8
60 A
30 A
15 A
0.4
0.0
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
Fig. 5 Typ. recovery energy Erec versus di/dt
DHG 30 I 1200 HA
7
6
5
Qrr
4
[µC]
3
2
TVJ = 125°C
VR = 600 V
60 A
30 A
15 A
1
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt
700
600 TVJ = 125°C
VR = 600 V
500
trr 400
[ns] 300
200
100
60 A
30 A
15 A
0
300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs]
Fig. 4 Typ. recovery time trr versus di/dt
1
ZthJC
[K/W
Ri
0.158
0.118
0.155
0.269
ti
0.0005
0.004
0.02
0.15
0.1
0.001
0.01
0.1
1
10
tP [s]
Fig. 6 Transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110510a
Free Datasheet http://www.datasheet4u.com/
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부품번호 | 상세설명 및 기능 | 제조사 |
DHG30I1200HA | Sonic Fast Recovery Diode | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |