DataSheet.es    


PDF 29F2G08AABWP Data sheet ( Hoja de datos )

Número de pieza 29F2G08AABWP
Descripción MT29F2G08AABWP
Fabricantes Micron Technology 
Logotipo Micron Technology Logotipo



Hay una vista previa y un enlace de descarga de 29F2G08AABWP (archivo pdf) en la parte inferior de esta página.


Total 59 Páginas

No Preview Available ! 29F2G08AABWP Hoja de datos, Descripción, Manual

2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Features
NAND Flash Memory
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
Features
• Organization:
• Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
x16: 1,056 words (1,024 + 32 words)
• Block size: 64 pages (128K + 4K bytes)
www.DataShDeetv4iUc.ecosmize: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
• Read performance:
• Random read: 25µs
• Sequential read: 30ns (3V x8 only)
• Write performance:
• Page program: 300µs (TYP)
• Block erase: 2ms (TYP)
• Endurance: 100,000 PROGRAM/ERASE cycles
• Data retention: 10 years
• First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
• VCC: 2.7V–3.6V
• Automated PROGRAM and ERASE
• Basic NAND command set:
• PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM DATA
INPUT, PROGRAM PAGE CACHE MODE, INTER-
NAL DATA MOVE, INTERNAL DATA MOVE with
RANDOM DATA INPUT, BLOCK ERASE, RESET
• New commands:
• PAGE READ CACHE MODE
• READ UNIQUE ID (contact factory)
• READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
• PROGRAM/ERASE operation completion
• PROGRAM/ERASE pass/fail condition
• Write-protect status
• Ready/busy# (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
• PRE pin: prefetch on power up
• WP# pin: hardware write protect
Figure 1: 48-PIN TSOP Type 1
Options
Marking
• Density:
2Gb (single die)
MT29F2GxxAAB
4Gb (dual-die stack)
MT29F4GxxBAB
8Gb (quad-die stack)
MT29F8GxxFAB
• Device width:
x8 MT29Fxx08x
x16 MT29Fxx16x
• Configuration: # of die # of CE# # of R/B#
11
1
A
21
1
B
42
2
F
• VCC: 2.7V–3.6V
A
• Second generation die
B
• Package:
48 TSOP type I (lead-free plating)
WP
48 TSOP type I (contact factory)
WG
• Operating temperature:
Commercial (0–70°C)
Extended temperature
ET
(-40°C to +85°C)
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__1.fm - Rev. H 9/05 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Free Datasheet http://www.datasheet4u.com/

1 page




29F2G08AABWP pdf
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
List of Figures
Figure 52:
Figure 53:
Figure 54:
BLOCK ERASE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57
RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58
www.DataSheet4U.com
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29bLOF.fm - Rev. H 9/05 EN
5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Free Datasheet http://www.datasheet4u.com/

5 Page





29F2G08AABWP arduino
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Addressing
Figure 5: Memory Map x8
(4Gb: 3FFFF83Fh) 1FFFF83Fh
(4Gb: 3FFC0000h) 1FFC0000h
000BF83Fh
00080000h
0007F83Fh
00040000h
0003F83Fh
A28 (4Gb: A29)
0
Block Address
A18
A17 page 63-0
A12
Page Address within a block
Spare Address within a page
A11 A5 A0
A11 A0
Column Address within a page
Figure 6: Memory Map x16
www.DataSheet4U.com
(4Gb: 1FFFFC1Fh) FFFF41Fh
(4Gb: 1FFE0000h) FFE0000h
Note:
005F41Fh
0040000h
003F41Fh
0020000h
001F41Fh
A27 (4Gb: A28)
0
Block Address
A17
A16 page 63-0
A11
Page Address within a block
Block address and page address = actual page address.
Spare Address within a page
A10 A4 A0
A10 A0
Column Address
09005aef818a56a7 pdf/ 09005aef81590bdd source
2gb_nand_m29b__2.fm - Rev. H 9/05 EN
11
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Free Datasheet http://www.datasheet4u.com/

11 Page







PáginasTotal 59 Páginas
PDF Descargar[ Datasheet 29F2G08AABWP.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
29F2G08AABWPMT29F2G08AABWPMicron Technology
Micron Technology

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar