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부품번호 | IKA15N60T 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 13 페이지수
IKA15N60T
TRENCHSTOP™ Series
q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Air Condition
Inverters
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKA15N60T 600V 15A
1.5V
175C
K15T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Solder temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Isolation Voltage
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Visol
1 J-STD-020 and JESD-022
2) Allowed number of short circuits:
IFAG IPC TD VLS
<1000; time between short circuits: >1s.
1
C
G
E
PG-TO220-3 (FullPak)
Package
PG-TO220-3 (FullPAK)
Value
600
18.3
10.6
45
45
17.2
10.8
45
20
5
35.7
-40...+175
-55...+150
260
2500
Unit
V
A
V
s
W
C
Vr m s
Rev. 2.6 25.07.2016
IKA15N60T
TRENCHSTOP™ Series
q
T =80°C
C
30A
10A
t =2µs
p
10µs
20A
T =110°C
C
Ic
10A
Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 15)
1A
0.1A
50µs
1ms
10ms
DC
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
35W
30W
25W
20W
15W
10W
5W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175C)
15A
10A
5A
0A
25°C
Figure 4.
75°C
125°C
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
IFAG IPC TD VLS
4
Rev. 2.6 25.07.2016
4페이지 IKA15N60T
TRENCHSTOP™ Series
q
1 .6 m J
*) Eon and Etsinclude losses
due to diode recovery
1 .2 m J
0 .8 m J
0 .4 m J
Ets*
E off
Eon*
0 .0 m J
0A
5A 10A 15A 20A 25A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 15Ω,
Dynamic test circuit in Figure E)
1.6 mJ
1.4 mJ
*) Eon and Ets include losses
due to diode recovery
Ets*
1.2 mJ
1.0 mJ
0.8 mJ
0.6 mJ
E off
0.4 mJ
Eon*
0.2 mJ
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 15A,
Dynamic test circuit in Figure E)
0 .9 m J
0 .8 m J
*) Eon and Ets include losses
due to diode recovery
0 .7 m J
Ets*
0 .6 m J
0 .5 m J
0.4mJ Eoff
0 .3 m J
Eon*
0 .2 m J
25°C 50°C
75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 15A, rG = 15Ω,
Dynamic test circuit in Figure E)
1 .2 m J
1 .0 m J
*) Eon and Ets include losses
due to diode recovery
0 .8 m J
E*
ts
0 .6 m J
E off
0 .4 m J
0 .2 m J
Eon*
0 .0 m J
300V
350V
400V
450V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 15A, rG = 15Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
7
Rev. 2.6 25.07.2016
7페이지 | |||
구 성 | 총 13 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IKA15N60T | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |