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PDF DB2J309 Data sheet ( Hoja de datos )

Número de pieza DB2J309
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
Logotipo Panasonic Logotipo



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No Preview Available ! DB2J309 Hoja de datos, Descripción, Manual

DB2J309
Silicon epitaxial planar type
For high speed switching circuits
Unit: mm
Features
Short reverse recovery time trr
Small reverse current IR
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: C5
Packaging
DB2J30900L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward surge current *1
Junction temperature
Operating ambient temperature
Storage temperature
VR
VRRM
IF(AV)
IFM
IFSM
Tj
Topr
Tstg
30
30
100
200
1
125
–40 to +85
–55 to +125
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
mA
mA
A
°C
°C
°C
1: Cathode
2: Anode
Panasonic
JEITA
Code
SMini2-F5-B
SC-90A
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF1 IF = 10 mA
VF2 IF = 100 mA
0.44
V
0.58
Reverse current
IR1 VR = 10 V
IR2 VR = 30 V
0.3
mA
2.0
Terminal capacitance
Reverse recovery time *1
Ct VR = 10 V, f = 1 MHz
trr IF = IR = 100 mA, Irr = 10 mA, RL = 100 W
3.0
1.3
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*1: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Publication date: April 2013
Ver. CED
1
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