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PDF 2N3209DCSM Data sheet ( Hoja de datos )
| Número de pieza | 2N3209DCSM | |
| Descripción | DUAL HIGH SPEED/ MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
2N3209DCSM
DUAL HIGH SPEED, MEDIUM POWER
PNP GENERAL PURPOSE TRANSISTOR
IN A HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
23
1
A
6
4
5
0.23
(0.009)
r
ad.
6.22 ± 0.13
(0.245 ± 0.005)
A
=
1.27 ± 0.13
(0.05 ± 0.005)
LCC2 PACKAGE
Underside View
PAD 1 - Collector 1
PAD 2 - Base 1
PAD 3 - Base 2
PAD 4 - Collector 2
PAD 5 - Emitter 2
PAD 6 - Emitter 1
FEATURES
• SILICON PLANAR EPITAXIAL DUAL PNP
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS AVAILABLE
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
For high reliablitity general purpose
applications requiring small size and low
weight devices.
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEBO
Emitter – Base Voltage
IC Collector Current
PD Device Dissipation
PD Derate above 50°C
Rja Thermal Resistance Junction to Ambient
Tj Max Junction Temperature
Tstg Storage Temperature
PER SIDE
TOTAL
–20V
–20V
–4V
–200mA
300mW
500mW
2mW / °C 3.3mW / °C
420°C / W
250°C / W
200°C
–65 to 200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 2/00
1 page | ||
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Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2N3209DCSM | DUAL HIGH SPEED/ MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE | Seme LAB |
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