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AUIRLU3110Z 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 AUIRLU3110Z은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 AUIRLU3110Z 자료 제공

부품번호 AUIRLU3110Z 기능
기능 Power MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


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AUIRLU3110Z 데이터시트, 핀배열, 회로
AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
D
S
PD - 96369
AUIRLR3110Z
AUIRLU3110Z
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
100V
11mΩ
k14mΩ
63A
42A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
D
S
G
D-Pak
AUIRLR3110Z
S
D
G
I-Pak
AUIRLU3110Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
™Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
63 k
45 k
42
250
140
0.95
±16
110
140
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
Free Datashee0t h5t/tp0:3///w1w1w.datasheet4u.com/




AUIRLU3110Z pdf, 반도체, 판매, 대치품
AUIRLR/U3110Z
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
1
0.1
0.01
0.1
2.5V
60μs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
10
2.5V
1
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000
100 TJ = 175°C
10
1
0.1
0
TJ = 25°C
VDS = 25V
60μs PULSE WIDTH
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
150
125
100
75
50
25
0
0
TJ = 25°C
TJ = 175°C
VDS = 10V
300μs PULSE WIDTH
25 50
ID,Drain-to-Source Current (A)
75
Fig 4. Typical Forward Transconductance
vs. Drain Current
4 www.irf.com
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AUIRLU3110Z 전자부품, 판매, 대치품
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
L
VCC
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
www.irf.com
AUIRLR/U3110Z
300
ID
250 TOP 4.4A
6.5A
BOTTOM 38A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
3.0
2.5
2.0
1.5 ID = 100μA
ID = 250μA
1.0 ID = 1.0mA
ID = 1.0A
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
7
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부품번호상세설명 및 기능제조사
AUIRLU3110Z

Power MOSFET ( Transistor )

International Rectifier
International Rectifier

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