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Datasheet 2SK1399 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SK1399 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1399
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK1399 is an N-channel vertical type MOS FET which can be driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving |  NEC | transistor |
| 2 | 2SK1399 | MOS Field Effect Transistor SMD Type
MOS Field Effect Transistor 2SK1399
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
MOSFET
Unit: mm
+0.1 2.4-0.1
Not necessary to consider driving current because of it is high input impedance Possible to reduce the number of parts by omitting the bias resistor
+0.1 1.3-0.1
Can be driven by a 3.0-V |  Kexin | transistor |
| 3 | 2SK1399 | MOSFET, Transistor SMD Type
MOSFET
Product specification
2SK1399
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
Not necessary to consider driving current because of it is high input impedance Possible to reduce the number of parts by omitting the bias resistor
+0.1 1.3-0.1
Can be driven by a 3.0-V power |  TY Semiconductor | mosfet |
2SK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SK0065 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximu  Panasonic Semiconductor mosfet | | |
| 2 | 2SK0123 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q High mutual conductance gm q Low noise voltage of NV
1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
Unit: mm
0.40+0.10 � Panasonic Semiconductor mosfet | | |
| 3 | 2SK0198 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t Panasonic Semiconductor mosfet | | |
| 4 | 2SK0301 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1
+0.2
0.45 –0.1
+0.2
I Absolute Panasonic Semiconductor mosfet | | |
| 5 | 2SK0601 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape Panasonic Semiconductor mosfet | | |
| 6 | 2SK0614 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5.0±0.2
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25° Panasonic Semiconductor mosfet | | |
| 7 | 2SK0615 | SILICON N-CHANNEL MOS FET Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone Panasonic Semiconductor mosfet | |
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