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Número de pieza | 2N3507 | |
Descripción | Silicon NPN Transistor | |
Fabricantes | Semicoa Semiconductor | |
Logotipo | ||
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No Preview Available ! Description
SEMICOA Corporation offers:
• Screening and processing per MIL-PRF-19500
• JAN level (2N3507J)
• JANTX level (2N3507JX)
• JANTXV level (2N3507JV)
• JANS level (2N3507JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25OC
Derate linearly above 25OC
Power Dissipation, TC = 25OC
Derate linearly above 25OC
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PT
PT
RθJA
TJ
TSTG
2N3507
Silicon NPN Transistor
Data Sheet
Applications
• General purpose switching transistor
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 1506
• Reference document:
MIL-PRF-19500/349
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
50 Volts
80 Volts
5 Volts
3A
1W
5.71 mW/°C
5W
28.6 mW/°C
175 °C/W
-65 to +200
°C
Copyright 2010
Rev. E
SEMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2N3507.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N3500 | Type 2N3500 Geometry 5620 Polarity NPN | Semicoa Semiconductor |
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2N3500 | NPN SILICON PLANAR RF TRANSISTORS | CDIL |
2N3500 | NPN SILICON SWITCHING TRANSISTOR | Microsemi |
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