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Datasheet 2SB817 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SB817 | POWER TRANSISTORS(12A/140V/100W) A
A
A
| Mospec Semiconductor | transistor |
2 | 2SB817 | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) 2SB817
AUDIO POWER AMPLIFIER DC TO DC CONVERTER
PNP
PLANAR SILICON TRANSISTOR
SC-65
! ! !
High Current Capability High Power Dissipation Complementary to 2SD1047
ABSOLUTE MAXIMUM RATING (TA=25℃)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector C | Wing Shing Computer Components | transistor |
3 | 2SB817 | PNP Epitaxial Planar Silicon Transistors Ordering number:680F
PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features
· Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).
· Wide AS | Sanyo Semicon Device | transistor |
4 | 2SB817 | Silicon PNP Power Transistor Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB817
DESCRIPTION ¡¤With TO-3PN package ¡¤Complement to type 2SD1047 APPLICATIONS ¡¤140V/12A AF 60W output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline ( | Inchange Semiconductor | transistor |
5 | 2SB817 | Transistor TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon Power Ttransistors
2SD1047 / 2SB817
DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base | TGS | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur Silan Microelectronics transistor | | |
2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th Panasonic Semiconductor transistor | | |
5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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