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PDF 40N60A4D Data sheet ( Hoja de datos )
| Número de pieza | 40N60A4D | |
| Descripción | HGT1N40N60A4D | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGT1N40N60A4D
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49349.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1N40N60A4D
SOT-227
40N60A4D
NOTE: When ordering, use the entire part number.
Features
• 100kHz Operation At 390V, 22A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Low Conduction Loss
Symbol
C
G
E
Packaging
JEDEC STYLE SOT-227B
GATE
EMITTER
TAB
(ISOLATED)
COLLECTOR EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Free Datasheet http://www.datasheet4u.com/
1 page  
HGT1N40N60A4D
Typical Performance Curves (Unless Otherwise Specified) (Continued)
190
180
170
VGE = 12V, VGE = 15V, TJ = 125oC
160
150
VGE = 12V or 15V, TJ = 25oC
140
RG = 2.2Ω, L = 200mH, VCE = 390V
130
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
80
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
70
RG = 2.2Ω, L = 200mH, VCE = 390V
65
60 TJ = 125oC, VGE = 12V OR 15V
55
50
45
40 TJ = 25oC, VGE = 12V OR 15V
35
30
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
80
400
350
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250ms
300
250
200
TJ = -55oC
TJ = 125oC
150 TJ = 25oC
100
50
0
6 7 8 9 10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
5
TJ = 125oC, VCE = 390V, VGE = 15V
ETOTAL = EON2 +EOFF
4
ICE = 80A
11
3
2
ICE = 40A
1
ICE = 20A
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASETEMPERATURE
16
IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC
14
12 VCE = 600V
10
VCE = 400V
8
6 VCE = 200V
4
2
0
0 50 100 150 200 250 300 350 400
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
70
TJ = 125oC, VCE = 390V, VGE = 15V
ETOTAL = EON2 +EOFF
10
ICE = 80A
ICE = 40A
1
ICE = 20A
0.1
1
10 100
RG, GATE RESISTANCE (Ω)
500
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
Free Datasheet http://www.datasheet4u.com/
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