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F4905S PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 F4905S
기능 IRF4905S
제조업체 International Rectifier
로고 International Rectifier 로고 



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F4905S 데이터시트, 핀배열, 회로
l Advanced Process Technology
l Surface Mount (IRF4905S)
l Low-profile through-hole (IRF4905L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF4905L) is available for low-
profile applications.
Absolute Maximum Ratings
G
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V…
Continuous Drain Current, VGS @ -10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.1478A
IRF4905S/L
HEXFET® Power MOSFET
D VDSS = -55V
RDS(on) = 0.02
ID = -74A
S
D 2 Pak
T O -262
Max.
-74
-52
-260
3.8
200
1.3
± 20
930
-38
20
-5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
8/25/97
Free Datasheet http://www.datasheet4u.com/




F4905S pdf, 반도체, 판매, 대치품
IRF4905S/L
7000
6000
5000
4000
3000
VGS = 0V,
f = 1MHz
C is s = C gs + C gd , Cds SH O RTE D
Crss = C gd
Co ss = Cds + C g d
C is s
C oss
2000
1000
C rs s
0A
1 10 100
-VD S , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I D = -38A
16
12
VDS = -44V
VDS = -28V
8
4
FOR TE ST CIRCUIT
SE E FIGURE 13
0A
0 40 80 120 160 200
Q G , Total G ate C harge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
10
TJ = 25°C
1 VGS = 0 V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-VSD , S ource-to-Drain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
100
100µ s
1m s
10
10m s
TC = 25°C
TJ = 175°C
Sin gle Pu lse
1
1 10
-VDS , Drain-to-Source V oltage (V )
A
100
Fig 8. Maximum Safe Operating Area
Free Datasheet http://www.datasheet4u.com/

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F4905S 전자부품, 판매, 대치품
IRF4905S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
‚
-
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
„
+

RG
VGS
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
[VDD]
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
Free Datasheet http://www.datasheet4u.com/

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