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PDF 2SC3072 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3072 | |
| Descripción | Silicon NPN Epitaxial | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Silicon NPN Epitaxial
2SC3072
Transistors
Features
High DC current gain.
Low collector saturation voltage.
High power dissipation.
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current pulse *
Base current
Collector power dissipation Ta = 25
Tc = 25
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
50
20
8
5
8
0.5
1.0
10
150
-55 to +150
Unit
V
V
V
A
A
A
W
W
* Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 20 V, IE = 0
IEBO VEB = 8 V, IC = 0
V(BR)CEO IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5A
hFE
VCE = 2 V, IC = 4A
VCE (sat) IC = 4 A, IB = 0.1 A
VBE VCE = 2 V, IC = 4 A
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
1 Base
2 Collector
3 Emitter
Min Typ Max Unit
100 nA
100 nA
20 V
140 450
70
1.0 V
1.5 V
100 MHz
40 pF
hFE Classification
Marking
Rank
hFE
A
140 240
C3072
B
200 330
C
300 450
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SC3072.PDF ] | |
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