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PDF MGA-412P8 Data sheet ( Hoja de datos )
| Número de pieza | MGA-412P8 | |
| Descripción | GaAs Enhancement-mode pHEMT Power Amplifier optimized | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MGA-412P8 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MGA-412P8
GaAs Enhancement-mode pHEMT Power Amplifier
optimized for IEEE 802.11b/g applications
Data Sheet
Description
Features
Avago Technologies’s MGA-412P8 linear power
amplifier is designed for applications in the (1.7-3)
GHz frequency range. The amplifier is optimized for
IEEE 802.11b/g WLAN applications and has a best-in-
class efficiency (PAE) of 25.5% (54Mbps OFDM)
achieved through the use of Avago Technologies’
proprietary GaAs Enhancement-mode pHEMT
process.
The MGA-412P8 is housed in a miniature 2.0 x 2.0 x
0.75mm3 8-lead leadless-plastic-chip-carrier (LPCC)
package. The compact footprint, low profile and
excellent thermal efficiency of the LPCC package
makes the MGA-412P8 an ideal choice as a power
amplifier for mobile IEEE 802.11b/g WLAN
applications.
It achieves +19.0 dBm linear output power that meets
3% EVM at 54Mbps data rate (OFDM Modulation),
and 23dBm at 11Mbps (CCCK modulation).
Component Image
2.0 x 2.0 x 0.75 mm
8-lead LPCC
• Advanced GaAs E-pHEMT
• Integrated power detector & power down functions
• High efficiency
• Single +3.3V Supply
• Small Footprint: 2x2mm2
• Low Profile: 0.8mm max.
Specifications
• At 2.452 GHz; 3.3V (Typ.) :
• Gain: 25.5 dB
• P1dB: 25.3 dBm
• Pout linear with IEEE 802.11g OFDM modulation
@54Mbps data rate: 19.0 dBm @ 3% EVM.
• Current @19dBm linear Pout: (54Mbps) : 95mA
• Reverse Isolation (typ): > 40dB
• Quiescent current (typ): 40mA
• Meets IEEE 802.11b @11Mbps (CCCK modulation)
with Pout: 23dBm while consuming 200mA.
Pin 8
Pin 7
Pin 6
Pin 5
Bottom View
Pin 1
Pin 2
Pin 3
Pin 4
Applications
• Power Amplifier for IEEE 802.11b/g WLAN
applications
• Bluetooth Power Amplifier
• 2.4GHz ISM band applications
1:Gnd
2:RFin
2:Gnd
4:Vdd1
1CX
8:Det
7:RFout
6:Vdd2
5:Pwr Down
Top View
Note:
Package marking provides Orientation and Identification
"1C" = Product Code
"X" = Date code indicates month of manufacture
Attention: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Technologies Application
Note A004R: Electrostatic Discharge,
Damage and Control.
Free Datasheet http://www.datasheet4u.com/
1 page  
Schematic Diagram
RF Input
L
L5
L=5.6 nH
R=
Detector output
L
L6
L=5.6 nH
R=
1
8
27
P ort C
P 1 C1
C=6.8 pF
36
45
TLIN*
TL1
C
C3
C=1.2 pF
CC
C2 C4
C=1.5 pF C=6.8 pF
L
L3
L=5.6 nH
RF output
P ort
P2
C
C7
C=2.2 uF
C
C8
C=1000 pF
C
C5
C=1000 pF
Vshutdown = +3.3V ON
Vshutdown =0V OFF
R
R1
R=22 Ohm
L
L4
L=18 nH
C
C6
C=0.1 uF
Vdd = +3.3V nom
Figure 5. Demo Board Schematic Diagram
* 0.56mm wide on 10mil thick Rogers RO4350 board
- Components L6, C2 and C3 should be located as close to the packaged device pins as possible.
- Components R1 and L4 are used to isolate the test board from Power Supply effects.
- Recommended PCB material is Roger, RO4350.
- Suggested component values may vary according to layout and PCB material.
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MGA-412P8.PDF ] | |
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