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PDF MGA-425P8 Data sheet ( Hoja de datos )
| Número de pieza | MGA-425P8 | |
| Descripción | GaAs Enchancement-mode PHEMT Power Amplifier | |
| Fabricantes | Agilent | |
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Agilent MGA-425P8
GaAs Enchancement-mode
PHEMT Power Amplifier in
2x2 mm2 LPCC Package
Data Sheet
Description
Agilent Technologies’s MGA-425P8
power amplifier is designed for
wireless application in the
2–10 GHz frequency range. The PA
has a high power efficiency (PAE)
achieved through the use of Agilent
Technologies’s proprietary GaAs
Enhancement-mode pHEMT process.
MGA-425P8 is housed in a miniature
2.0 x 2.0 x 0.75 mm 8-lead leadless-
plastic-chip-carrier (LPCC) package.
The compact footprint, low profile
couple with the excellent thermal
efficiency of the LPCC package
makes the MGA-425P8 an ideal
choice as power amplifier that saves
board space.
On-chip bias circuitry allows
operation from a single +3.3V
power supply. The output of the
amplifier is near to 50Ω (below 2:1
VSWR) around 4.9–5.8 GHz. This
makes MGA-425P8 an ideal choice
as power amplifier for broadband
IEEE 802.11a system as well as
other high performance wireless
application in the 2–10 GHz
frequency range.
One external resistor (RBias) is
used to set the bias current of the
device over a wide range.
This allows the designer to use the
same part in several circuit posi-
tions and tailor the output power/
linearity performance, and current
consumption, to suit each position.
Pin Connections and
Package Marking
2.0 x 2.0 x 0.75 mm 8-lead LPCC
Pin 1 (NC)
Pin 8 (NC)
Pin 2 (RFin)
Pin 3 (NC)
2YX
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 4 (NC)
Pin 5 (RBias)
Top View
Note:
Package marking provides orientation and
identification
“2Y” = Device Code
“X” = Data code indicates the month of
manufacture.
Pin 1 (NC)
Pin 2 (RFin)
Pin 3 (NC)
Pin 4 (NC)
GND
Pin 8 (NC)
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 5 (RBias)
Bottom View
Note:
Use Die Attach Padded for electrical grounding
and thermal dissipation
Simplified Schematic
Rbias
Vbias
5
2
Ibias
Bias
Vd
Id=Ids + Ibias
Ids
7
1, 3, 4, 6, 8
Features
• Near 50Ω broadband output match
• Single +3.3V supply
• High Gain & OIP3
• Miniature 2 x 2 x 0.75 mm
LPCC package
• Pb-free & MSL-1 package
• Tape-and-Reel packaging
option available
Specifications
at 5.25 GHz, 3.3V, 58 mA (typ)
• 13.3 dBm Linear Pout @ 5% EVM
• 10.3% PAE @ +13.3 dBm Pout
• 12 dBm Linear Pout @ 3% EVM
• 7.6% PAE @ + 12 dBm Pout
• 47% PAE @ P1dB
• 20.3 dBm P1dB
• 32.9 dBm OIP3
• 16 dB Gain
• 1.7 dB NF
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Free Datasheet http://www.datasheet4u.com/
1 page  
MGA-425P8 Typical Performance Curves, Vds = 3.3V (at 25°C unless specified otherwise)
40
35
30
25
20
15
10
0 20 40 60 80
IDS (mA)
Figure 12. OIP3 vs. Ids at 5.25 GHz.
100
24
22
20
18
16
14
12
10
0 20 40 60 80
IDS (mA)
Figure 13. P1dB vs. Ids at 5.25 GHz.
100
20
18
16
14
12
10
8
6
0 20 40 60 80
IDS (mA)
Figure 14. GAIN vs. Ids at 5.25 GHz.
100
1.8
1.6
1.4
1.2
1
0.8 Vd=4V
Vd=3.3V
0.6
0.4
20
40 60
IDS (mA)
80
Figure 15. FMIN vs. Ids at 5.25 GHz.
100
12
10
8
6
4
2
0
0 20 40 60 80 100
IDS (mA)
Figure 16. RBias vs. Ids (Vds=3.3V).
120
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
MGA-425P8 Typical Scattering Parameters (at 25°C, VDS = 4V, IDS = 60 mA)
Freq.
GHz
S11
Mag. Ang.
S21
dB Mag. Ang.
S12
dB Mag.
0.1 0.797 -16.4
0.5 0.793 -65.7
0.9 0.809 -100.8
1 0.81 -107.5
1.5 0.826 -133.2
1.9 0.83 -147
2 0.836 -150.5
2.4 0.839 -160.4
3 0.844 -171.8
3.5 0.847 -179.5
3.9 0.845 175.4
4 0.856 174.2
4.5 0.854 168.1
5 0.856 162.7
5.1 0.856 161.6
5.2 0.856 160.6
5.3 0.856 159.6
5.4 0.856 158.5
5.5 0.855 157.5
5.6 0.855 156.5
5.7 0.857 155.5
5.8 0.857 154.5
6 0.861 153.4
7 0.87 143.3
8 0.862 133.3
9 0.869 122.3
10 0.873 111.8
11 0.883 101.5
12 0.897 91.8
13 0.911 83.3
14 0.914 75.5
15 0.92 68.6
16 0.906 60.2
17 0.893 52.4
18 0.904 44.3
27.38
25.70
23.80
23.31
21.00
19.39
18.98
17.56
15.74
14.47
13.49
13.15
12.29
11.42
11.28
11.12
10.96
10.81
10.65
10.51
10.35
10.19
9.75
8.42
7.25
6.36
5.38
4.13
3.23
2.18
1.01
-0.10
-1.13
-2.17
-3.30
23.399
19.285
15.495
14.637
11.22
9.32
8.891
7.551
6.125
5.288
4.726
4.547
4.116
3.726
3.664
3.598
3.533
3.47
3.409
3.352
3.291
3.231
3.072
2.635
2.305
2.079
1.858
1.608
1.451
1.285
1.123
0.989
0.878
0.779
0.684
171
144.4
124.6
120.7
104.6
95
92.4
84.7
74.9
67.7
61.9
62.4
55.4
49.9
48.6
47.4
46.2
45
43.8
42.5
41.3
40
37.5
27
15.8
5.1
-7.7
-18.8
-29.8
-41.4
-52.2
-61.5
-71.3
-80.5
-90.4
-33.98
-32.40
-29.12
-28.64
-27.33
-26.94
-26.74
-26.56
-26.38
-26.20
-26.20
-26.20
-26.20
-26.02
-26.02
-26.02
-25.85
-25.85
-25.85
-25.85
-25.85
-25.85
-26.02
-26.02
-25.35
-25.85
-25.19
-26.02
-25.68
-26.02
-26.20
-26.94
-26.94
-26.94
-28.18
0.02
0.024
0.035
0.037
0.043
0.045
0.046
0.047
0.048
0.049
0.049
0.049
0.049
0.05
0.05
0.05
0.051
0.051
0.051
0.051
0.051
0.051
0.05
0.05
0.054
0.051
0.055
0.05
0.052
0.05
0.049
0.045
0.045
0.045
0.039
Ang.
79.2
58
41.9
38.7
26.7
19.6
18.4
13.5
8
4.3
1
2.3
-1
-3.3
-3.9
-4.5
-5
-5.6
-6.2
-6.9
-7.5
-8.3
-9.4
-13.4
-17.9
-24.1
-29.8
-34.2
-40.7
-45.9
-52.4
-56
-61.6
-65.5
-64.6
S22
Mag. Ang.
0.66
0.578
0.463
0.437
0.331
0.266
0.254
0.215
0.177
0.16
0.16
0.142
0.144
0.139
0.138
0.138
0.141
0.142
0.141
0.142
0.145
0.147
0.16
0.167
0.16
0.174
0.204
0.228
0.284
0.341
0.392
0.433
0.469
0.502
0.533
-7.8
-31.2
-49.1
-52.8
-68.1
-76.9
-80.9
-89.5
-102.1
-109.9
-117.9
-126.1
-128.7
-134.7
-135.2
-135.4
-136.1
-137.7
-138.7
-138.9
-139.7
-141
-143.5
-158.6
-172.5
164.9
139.2
119.6
113
105.1
99.7
95.9
91
84.9
75.3
MSG/MAG
35.91
29.05
26.46
25.97
24.17
23.16
22.86
22.06
21.06
20.33
19.84
19.68
19.24
18.72
18.65
18.57
18.41
18.33
18.25
18.18
18.10
18.02
17.88
17.22
16.30
13.27
11.66
11.72
11.59
10.70
9.93
8.07
6.48
5.78
13.27
Typical Noise Parameters, VDS = 4V, IDS = 60 mA
Freq Fmin
GHz dB
Γopt
Mag.
Γopt
Ang.
Rn/50
0.9
0.86 0.1
-133.6
0.06
1.5
0.94
0.23
-175.5
0.06
1.9 1
0.26
-178.3
0.06
2
1.03
0.27
-179.6
0.06
2.4
1.08 0.3
178.7
0.06
3
1.17
0.36
-178.1
0.06
3.5
1.25 0.4
-173.8
0.06
3.9
1.3
0.43
-171.7
0.06
4.5 1.39 0.47 -167 0.06
5
1.47
0.48
-164.8
0.06
5.2 1.5 0.49 -163 0.06
5.5
1.53 0.5
-160.2
0.07
5.8
1.6
0.51
-158.6
0.07
6
1.62
0.53
-157.1
0.07
7
1.76
0.54
-149.2
0.1
8
1.93
0.53
-139.8
0.16
9
2.08
0.55
-126.4
0.28
10
2.22
0.61
-115.6
0.37
NF @
50 dB
0.83
1.01
1.12
1.15
1.27
1.41
1.59
1.7
1.9
2.08
2.1
2.18
2.27
2.33
2.63
2.94
3.25
3.61
40
30
MSG
20
10 S21
0
MAG
-10
0 5 10 15
FREQUENCY (GHz)
Figure 22. MSG/MAG & |S21|2 vs.
Frequency at 4V, 60 mA.
Note:
1. S Parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead.
The output reference plane is at the end of the drain lead.
11
20
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet MGA-425P8.PDF ] | |
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