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PDF MGA-43128 Data sheet ( Hoja de datos )
| Número de pieza | MGA-43128 | |
| Descripción | High Linearity (700-800) MHz Wireless Data Power Amplifier | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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MGA-43128
High Linearity (700-800) MHz Wireless Data Power Amplifier
Data Sheet
Description
Avago Technologies’ MGA-43128 is a high-linearity
power amplifier for use in the (700-800) MHz band.
High linear output power at 5V is achieved using Avago
Technologies’ proprietary 0.25 m GaAs Enhancement-
mode pHEMT process. It is housed in a miniature 5.0 x 5.0
x 0.85 mm3 28-lead QFN package. It includes a shutdown
and single-bit gain switch function. A detector is also
included on-chip. The compact footprint coupled with
high gain and high efficiency makes the MGA-43128 an
ideal choice for UMTS 3GPP LTE driver and final stage
amplifier applications.
Component Image
5.0 x 5.0 x 0.85 mm3 28-lead QFN Package (Top View)
43128
YYWW
XXXX
NC NC
NC Vdd2/RFout
NC Vdd2/RFout
RFin Gnd Vdd2/RFout
NC Vdd2/RFout
NC Vdd2/RFout
Vbyp NC
Notes:
Package marking provides orientation and identification
“43128” = Device Part Number
“YYWW” = Year and Work Week
“XXXX” = Assembly Lot Number
Functional Block Diagram
M1 Vdd1
RFin Match
Vdd2/RFout
Features
High gain: 33.4 dB
High Power linear output: 29.1 dBm at 5 V supply (2.5%
EVM, LTE 3GPP.TS 36.104, 10 MHz bandwidth OFDMA)
Built-in detector and shutdown switches
Switchable gain: 18 dB attenuation using one single
CMOS compatible switch pin
3GPP spectral mask compliant at 29 dBm output power
GaAs E-pHEMT Technology [1]
Low cost small package size: 5.0 x 5.0 x 0.85 mm3
MSL-2a, lead-free and halogen free
Useable at 3.3 V supply for lower supply voltage
applications (27 dBm at 2.5% EVM, LTE 3GPP.TS 36.101,
10MHz bandwidth SC-FDMA)
Specifications
750 MHz; Vdd = Vbias = 5.0 V, Vc1 = 2.8 V, Vc2 = 2.4 V, Iqtotal
= 370 mA (typ), LTE 3GPP.TS 36.104, 10 MHz bandwidth
OFDMA
33.4 dB Gain
29.1 dBm Linear Pout (2.5% EVM)
36 dBm OP1dB
22% PAE @ Linear Pout
3.3 V Vdet @ Linear Pout
18 dB Switchable Gain Attenuation (Low Gain Mode)
40 A Shutdown Current (Vc = Vbias = 0 V)
Applications
High linearity amplifier for (700-800) MHz LTE AP, CPE,
and Picocell
Base Station Driver Amplifier
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
MMIC
Vbyp
Bias Bias
Vc1 Vc2
Vdet
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 500 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Free Datasheet http://www.datasheet4u.com/
1 page  
5.0
4.5 25° C
-40° C
4.0 85° C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10 12 14 16 18 20 22 24 26 28 30
Pout (dBm)
Figure 11. Over-temperature EVM vs Output Power at 750 MHz
1.0
25° C
0.9 -40° C
85° C
0.8
0.7
0.6
0.5
0.4
0.3
10 12 14 16 18 20 22 24 26 28 30
Pout (dBm)
Figure 12. Over-temperature Idd_total vs Output Power at 750 MHz
5.0
4.5 25° C
-40° C
4.0 85° C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10 12 14 16 18 20 22 24 26 28 30
Pout (dBm)
Figure 13. Over-temperature Vdet vs Output Power at 750 MHz
35
34
33
32
31
25° C
30 -40° C
85° C
29
6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
Pout (dBm)
Figure 14. Over-temperature CW Gain vs Output Power at 750 MHz
5.0
4.5 25° C
-40° C
4.0 85° C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10 12 14 16 18 20 22 24 26 28 30
Pout (dBm)
Figure 15. Over-temperature EVM vs Output Power at 756 MHz
1.0
25° C
0.9 -40° C
85° C
0.8
0.7
0.6
0.5
0.4
0.3
10 12 14 16 18 20 22 24 26 28 30
Pout (dBm)
Figure 16. Over-temperature Idd_total vs Output Power at 756 MHz
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
5.0
4.5 25° C
-40° C
4.0 85° C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10 12 14 16 18 20 22 24 26 28 30
Pout (dBm)
Figure 43. Over-temperature EVM vs Output Power at 782 MHz
1.0
25° C
0.9 -40° C
0.8 85° C
0.7
0.6
0.5
0.4
0.3
0.2
10 12 14 16 18 20 22 24 26 28 30
Pout (dBm)
Figure 44. Over-temperature Idd_total vs Output Power at 782 MHz
4.0
25° C
3.5 -40° C
3.0 85° C
2.5
2.0
1.5
1.0
0.5
0.0
10 12 14 16 18 20 22 24 26 28 30
Pout (dBm)
Figure 45. Over-temperature Vdet vs Output Power at 782 MHz
35
34
33
32
31
30
29 25° C
28
-40° C
85° C
27
8 10 12 14 16 18 20 22 24 26 28 30 32 34 36
Pout (dBm)
Figure 46. Over-temperature CW Gain vs Output Power at 782 MHz
5.0
4.5 25° C
-40° C
4.0 85° C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10 12 14 16 18 20 22 24 26 28 30
Pout (dBm)
Figure 47. Over-temperature EVM vs Output Power at 787 MHz
1.0
25° C
0.9 -40° C
0.8 85° C
0.7
0.6
0.5
0.4
0.3
0.2
10 12 14 16 18 20 22 24 26 28 30
Pout (dBm)
Figure 48. Over-temperature Idd_total vs Output Power at 787 MHz
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet MGA-43128.PDF ] | |
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