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MGA-64606 데이터시트 PDF




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광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 MGA-64606 기능
기능 Low Noise Amplifier
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MGA-64606 데이터시트, 핀배열, 회로
MGA-64606
Low Noise Amplifier with switchable Bypass/Shutdown Mode
in Low Profile Package
Data Sheet
Description
Avago Technologies’ MGA-64606 is an economical,
easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with
Bypass/ Shutdown mode. The LNA has low noise and high
linearity achieved through the use of Avago Technologies’
proprietary 0.25 m GaAs Enhancement-mode pHEMT
process. The Bypass/Shutdown mode enables the LNA to
be bypassed during high input signal power and reduce
current consumption. It is housed in a low profile 2.0 x 1.3
x 0.5mm3 6-pin Ultra Thin Package. The compact footprint
and low profile coupled with low noise, high linearity make
the MGA-64606 an ideal choice as a low noise amplifier for
mobile receiver in the WiMAX, WLAN(802.11b/g), WiBro
and DMB applications.
Component Image
2.0 x 1.3 x 0.5 mm3 6-lead Ultra Thin Package
Note:
Package marking provides
64X orientation and identification
“64” = Product Code
“X” = Month Code
Pin Configuration
Pin 1 (Vbias)
Pin 2 (RFin)
GND
Pin 3 (Gnd)
TOP VIEW
Pin 6 (Vsd)
Pin 5 (RFOut)
Pin 4 (Vdd)
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Features
 Low current consumption
 Adjustable bias current
 1.5 GHz – 3 GHz operating range
 Low Noise Figure
 Low current consumption in Bypass Mode, <100 A
 Fully matched to 50 ohm in Bypass Mode
 High Linearity (LNA and Bypass Mode)
 Low profile package
Typical Performance
2.4 GHz; 3V , 7mA (Typ):
 15.3 dB Gain
 0.95 dB Noise Figure
 +5.0 dBm Input IP3
 -3.0 dBm Input Power at 1 dB gain compression
 3.8 dB Insertion Loss in Bypass Mode
 12 dBm IIP3 in Bypass Mode (Pin = -20 dBm)
 <100 A current consumption in Bypass mode
Applications
 Low noise amplifier for GPS, WiMAX, WLAN, WiBro and
DMB applications.
 Other ultra low noise applications in the 1.5 – 3 GHz
band.
Simplified Schematic
VBias
R
1
Bias /
Control
RF IN 2
L
3
LNA
6 VSD
L
5
RF OUT
LR
4 Vdd
CC
Free Datasheet http://www.datasheet4u.com/




MGA-64606 pdf, 반도체, 판매, 대치품
Demo Board Layout
1 2 3 4 56
RF Input
Vsd
RF Output
Figure 4. Demo Board Layout Diagram
Application Notes
1. Performance in a specified frequency band can be optimized by changing component values in the demo board
above to suit the application at that frequency. The schematic on page 5 and 11 show two sets of components used
to demonstrate performance at the (2.3 – 2.4) GHz Wibro band and (2.5 – 2.7) GHz WiMAX/DMB band.
2. Pin1 (Vbias pin) voltage in LNA mode can be varied to enable the LNA bias current to be adjusted, refer to next
graph:
12
10
8
6
4
2
0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
Vbias (V)
Figure 5. Id vs Vbias (Vdd = 3 V; Vsd = 0 V). Vbias is varies in this plot.
4
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MGA-64606 전자부품, 판매, 대치품
LNA Mode Plots (2.4 GHz match); Vdd = 3 V, Vbias = 1.8 V, Vsd = 0 V
Figure 14. Edwards-Sinsky Output Stability Factor(Mu) at Vdd = 3 V
Figure 15. Edwards-Sinsky Input Stability Factor(Mu’) at Vdd = 3 V
Bypass Mode Plots (2.4 GHz match); Vdd = 3 V, Vbias = 0 V, Vsd = 0 V
0
-5
-10
-15
-20
-25
-30
-35 Input Return Loss
-40 Output Return Loss
Gain
-45 Isolation
-50
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
Figure 16. Bypass Mode Gain, Input Return Loss, Output Return Loss,
Isolation vs Frequency
-2
-3
25° C
8C
-4 -40° C
-5
-6
-7
-8
-9
-10
2.0 2.2 2.4 2.6 2.8 3.0
Frequency (GHz)
Figure 17. Bypass Mode Insertion Loss vs Frequency vs Temperature
30
25° C
25 8C
-40° C
20
15
10
5
0
2.0 2.2 2.4 2.6 2.8 3.0
Frequency (GHz)
18
16
14
12
10
8
6
4
2
0
-30 -25 -20 -15 -10 -5 0 5
Pin (dBm)
Figure 18. Bypass Mode IIP3 vs Frequency vs Temperature
Figure 19. Bypass Mode IIP3 vs Input Power
7
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관련 데이터시트

부품번호상세설명 및 기능제조사
MGA-64606

Low Noise Amplifier

AVAGO
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