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PDF AON6290 Data sheet ( Hoja de datos )
| Número de pieza | AON6290 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON6290
100V N-Channel MOSFET
General Description
Product Summary
The AON6290 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
100V
85A
< 4.6mΩ
< 6.2mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
85
67
260
28
23
60
180
208
83
7.3
4.7
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14
40
0.3
Max
17
55
0.6
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: July 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6290
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
300
TA=25°C
100
TA=150°C
10
TA=100°C
TA=125°C
250
200
150
100
50
1
1 10 100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
100
80
60
40
20
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.0001 0.001 0.01 0.1 1 10 0 100 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: July 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AON6290.PDF ] | |
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