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PDF AON6428 Data sheet ( Hoja de datos )

Número de pieza AON6428
Descripción N-Channel MOSFET
Fabricantes Freescale 
Logotipo Freescale Logotipo



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AON6428
30V N-Channel MOSFET
General Description
The AON6428 uses advanced trench technology to provide excellent R ,DS(ON) low gate charge.This device is
suitable for use as a high side switch in SMPS and general purpose applications.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS= 4.5V)
30V
43A
< 10m
< 14.5m
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.05mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
43
27
80
11
8
45
51
30
12
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
21
50
3.5
Max
25
60
4.2
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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AON6428 pdf
AON6428
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60 TA=150°C
TA=25°C
TA=100°C
40
20 TA=125°C
40
30
20
10
0
0.000001
0.0000T1ime in avala0n.c0h00e1, tA (s)
0.001
Figure12:SinglePulseAvalanche capability(Note C)
0
0 25 50 75 100
TCASE (°C)
Figure 13: Power De-rating (Note F)
125
150
50 10000
TA=25°C
40 1000
30 17
100 5
2
20 10
10
10
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
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