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PDF AON6440 Data sheet ( Hoja de datos )

Número de pieza AON6440
Descripción N-Channel MOSFET
Fabricantes Freescale 
Logotipo Freescale Logotipo



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No Preview Available ! AON6440 Hoja de datos, Descripción, Manual

AON6440
40V N-Channel MOSFET
SDMOS TM
General Description
The AON6440 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with co ntrolled switching behavior. This universal technology is we ll
suited for PWM, load switching and general purpose applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
40V
85A
< 3.4m
< 4.5m
100% UIS Tested
100% Rg Tested
Top View
D
18
27
36
45
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
85
67
250
20
15
72
259
83
33
2.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14
40
1
Max
17
55
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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AON6440 pdf
AON6440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
230
200
TA=25°C
170
TA=100°C
140
TA=150°C
110
80
50 TA=125°C
20
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
100
80
60
40
20
0
0
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.0001
0.01
1
100 10000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
PD
Single Pulse
Ton
T
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
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