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PDF 3DD13002B Data sheet ( Hoja de datos )
| Número de pieza | 3DD13002B | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jiangsu Changjiang | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002/ 3DD13002B TRANSISTOR (NPN)
TO-92
FEATURE
Power dissipation
PCM: 900 mW (Tamb=25℃)
Collector current
ICM: 3DD13002: 1 A
3DD13002B: 0.8 A
Collector-base voltage
V(BR)CBO:
600 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
Symbol
Test conditions
V(BR)CBO
Ic=100µA, IE=0
V(BR)CEO
Ic= 1mA, IB=0
V(BR)EBO
IE= 100µA, IC=0
ICBO VCB= 600V, IE=0
IEBO VEB= 6V, IC=0
hFE(1)
VCE= 10V, IC= 200 mA
hFE(2)
VCE= 10V, IC= 10 mA
VCE(sat)
IC=200mA, IB= 40 mA
VBE(sat)
fT
tf
ts
IC=200mA, IB=40 mA
VCE=10V, Ic=100mA
f =1MHz
IC=1A, IB1=-IB2=0.2A
VCC=100V
MIN
600
400
6
9
6
5
TYP
MAX
100
100
40
UNIT
V
V
V
µA
µA
0.5 V
1.1 V
MHz
0.5 µs
2.5 µs
CLASSIFICATION OF hFE(1)
Range
9-15
15-20
20-25
25-30
30-35
35-40
Free Datasheet http://www.datasheet4u.com/
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