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What is 3DD13007?

This electronic component, produced by the manufacturer "JGD", performs the same function as "TRANSISTOR".


3DD13007 Datasheet PDF - JGD

Part Number 3DD13007
Description TRANSISTOR
Manufacturers JGD 
Logo JGD Logo 


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No Preview Available ! 3DD13007 datasheet, circuit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007 TRANSISTOR NPN
FEATURES
Power dissipation
PCM : 2 W Tamb=25
Collector current
ICM: 8 A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 220
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 1mA IE=0
700
V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10m A IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 1mA IC=0
9
V
Collector cut-off current
ICBO VCB= 700V IE=0
1 mA
Emitter cut-off current
IEBO VEB= 9 V IC=0
100 µA
DC current gain
hFE 1
hFE 2
VCE= 5V, IC= 2 A
VCE=5 V, IC=5A
8
5
40
30
Collector-emitter saturation voltage
VCE(sat)
IC=2A,IB=0.4A
1V
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Fall time
Storage time
CLASSIFICATION OF hFE(1)
Rank
VBE(sat)
fT
Cob
tf
ts
IC=2A, IB= 0.4A
Ic=500mA,VCE=10V
f=1MHZ
VCE=10,IE=0 f=0.1MHz
Vcc=125V, Ic=5A
IB1=-IB2=1A
4
1.2 V
MHZ
80 pF
0.7 µs
3 µs
Range
8-15
15-20
20-25
25-30
30-35
35-40
Free Datasheet http://www.datasheet4u.com/


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 3DD13007 electronic component.


Information Total 3 Pages
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