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부품번호 | STU150N3LLH6 기능 |
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기능 | N-channel MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 16 페이지수
STD150N3LLH6
STP150N3LLH6, STU150N3LLH6
N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
STD150N3LLH6
STP150N3LLH6
STu150N3LLH6
VDSS
30 V
30 V
30 V
RDS(on) max
0.0028 Ω
0.0033 Ω
0.0033 Ω
ID
80 A
80 A
80 A
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
3
1
DPAK
IPAK
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!" OR
'
Table 1. Device summary
Order codes
STD150N3LLH6
STP150N3LLH6
STU150N3LLH6
Marking
150N3LLH6
150N3LLH6
150N3LLH6
3
!-V
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
September 2009
Doc ID 15227 Rev 3
1/16
www.st.com
16
Free Datasheet http://www.datasheet4u.com/
Electrical characteristics
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
V(BR)DSS
Drain-source breakdown
Voltage
IDSS
IGSS
VGS(th)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250 µA, VGS= 0
VDS = 30 V
VDS = 30 V,Tc = 125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
SMD version
VGS = 10 V, ID = 40 A
VGS = 4.5 V, ID = 40 A
SMD version
VGS = 4.5 V, ID = 40 A
Min. Typ. Max. Unit
30 V
1 µA
10 µA
±100 nA
1 2.5 V
0.0024 0.0028 Ω
0.0029 0.0033 Ω
0.0034 0.0045 Ω
0.0039 0.0049 Ω
Table 5. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
RG Gate input resistance
Test conditions
VDS = 25 V, f=1 MHz,
VGS = 0
VDD = 15 V, ID = 80 A
VGS = 4.5 V
(see Figure 14)
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
Min Typ. Max. Unit
4040
pF
- 740 - pF
425 pF
40 nC
- 16.3 - nC
15.8 nC
- 1.4 - Ω
4/16
Doc ID 15227 Rev 3
Free Datasheet http://www.datasheet4u.com/
4페이지 STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
Electrical characteristics
Figure 8.
VGS
(V)
12
10
8
Gate charge vs gate-source voltage Figure 9. Capacitance variations
VDD=15V
ID=80A
AM04000v1
C
(pF)
6100
f=1MHz
4600
AM00893v1
Ciss
6 3100
4
2
0
0 20 40 60 80 100 Qg(nC)
1600
Crss
100
0
5
Coss
10 15 20 25 VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.1
1.0
ID=250µA
AM04901v1
RDS(on)
(norm)
1.6
1.4
1.2
ID=40A
VGS=10V
AM04902v1
0.8 1.0
0.6
0.4
0.2
-50 0 50 100 150 TJ(°C)
0.8
0.6
0.4
0.2
0
-50 -25
0
25 50 75 100 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
1.0
TJ=-50°C
AM04906v1
0.9
0.8
0.7 TJ=25°C
TJ=175°C
0.6
0.5
0.4
0
20 40 60 80 ISD(A)
Doc ID 15227 Rev 3
7/16
Free Datasheet http://www.datasheet4u.com/
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부품번호 | 상세설명 및 기능 | 제조사 |
STU150N3LLH6 | N-channel MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |