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PDF 2N4036 Data sheet ( Hoja de datos )
| Número de pieza | 2N4036 | |
| Descripción | CASE 79.04/ STYLE 1 TO-39 (TO-205AD) | |
| Fabricantes | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N4036/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol 2N4036 2N4037
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Base Current
Collector Current — Continuous
Continuous Power Dissipation
at or Below TC = 25°C
Linear Derating Factor
VCEO
VCBO
VEBO
IB
IC
PD
– 65 – 40
– 90 – 60
– 7.0
– 7.0
– 0.5
– 1.0
5.0 5.0
28.6 28.6
Continuous Power Dissipation
at or Below TA = 25°C
Linear Derating Factor
PD
1.0 1.0
5.72 5.72
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +200
Lead Temperature
1/16″ from Case for 10 Seconds
TL 230
THERMAL CHARACTERISTICS
Characteristic
Symbol 2N4036 2N4037
Thermal Resistance, Junction to Case
RqJC
35
35
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage(1)
(IC = – 100 mAdc, IB = 0)
2N4036
2N4037
Collector – Base Breakdown Voltage
(IC = – 0.1 mAdc)
2N4037
Collector Cutoff Current
(VCE = – 85 Vdc, VEB = – 1.5 Vdc)
(VCE = – 30 Vdc, VEB = – 1.5 Vdc, TC = 150°C)
2N4036
2N4037
Collector Cutoff Current
(VCB = – 90 Vdc, IE = 0)
(VCB = – 60 Vdc, IE = 0)
2N4036
2N4037
Emitter Cutoff Current
(VEB = – 7.0 Vdc, IC = 0)
2N4036
(VEB = – 5.0 Vdc, IC = 0)
2N4037
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/°C
Watts
mW/°C
°C
°C
Unit
°C/W
Symbol
VCEO(sus)
V(BR)CBO
ICEX
ICBO
IEBO
2N4036
2N4037
32 1
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
Min Max Unit
Vdc
– 65 —
– 40 —
– 60 — Vdc
mAdc
— – 0.1
— – 100
µAdc
— – 1.0
— – 0.25
µAdc
— – 10
— – 1.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N4036.PDF ] | |
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