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PDF MMSZ11ET1G Data sheet ( Hoja de datos )
| Número de pieza | MMSZ11ET1G | |
| Descripción | (MMSZxxxET1G) Zener Voltage Regulators | |
| Fabricantes | ON Semiconductor | |
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MMSZxxxET1G Series,
SZMMSZxxxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Specification Features
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL 25C
Total Power Dissipation on FR−5 Board,
(Note 2) @ TL = 75C
Derated above 75C
Ppk
PD
W
225
500 mW
6.7 mW/C
Thermal Resistance, Junction−to−Ambient
(Note 3)
RqJA
340 C/W
Thermal Resistance, Junction−to−Lead
(Note 3)
RqJL
150 C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
3. Thermal Resistance measurement obtained via infrared Scan Method
http://onsemi.com
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
1 xxx MG
G
xxx = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MMSZxxxET1G
SZMMSZxxxET1G
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
3,000 /
Tape & Reel
MMSZxxxET3G
SOD−123
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1
Publication Order Number:
MMSZ2V4ET1/D
Free Datasheet http://www.datasheet4u.com/
1 page  
MMSZxxxET1G Series, SZMMSZxxxET1G Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
100
TA = 25C
1000
100
10
1
BIAS AT
50% OF VZ NOM
10
0.1
0.01
0.001
0.0001
1 0.00001
1 10 100 0
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
+150C
+ 25C
− 55C
10 20 30 40 50 60 70 80
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
90
100 100
TA = 25C
TA = 25C
10 10
11
0.1 0.1
0.01 0
24
6 8 10
VZ, ZENER VOLTAGE (V)
12
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
0.0110
30 50 70
VZ, ZENER VOLTAGE (V)
90
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
100
90 tr
80
70
60
50
40
30
20
10
00
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
tP
20 40
60
t, TIME (ms)
Figure 11. 8 20 ms Pulse Waveform
80
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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| PDF Descargar | [ Datasheet MMSZ11ET1G.PDF ] | |
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