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부품번호 | NOIS1SM1000S 기능 |
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기능 | 1M Pixel Radiation Hard CMOS Image Sensor | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 30 페이지수
NOIS1SM1000S,
NOIS1SM1000A
STAR1000 1M Pixel
Radiation Hard CMOS
Image Sensor
Features
• 1024 x 1024 Active Pixels
• 15 mm x 15 mm Pixel Size
• 1 inch − 35 mm Optical Format
• High Radiation Tolerance
• High Sensitivity
• Low Noise
• Monochrome and Color
• 11 Frames per Second (fps) at Full Resolution
• On-chip 10-bit Analog-to-Digital Converter (ADC)
• Region of Interest (ROI) Readout
• Windowed and Subsampled Readout
• Rolling Shutter
• On-chip Fixed Pattern Noise (FPN) Correction
• Ceramic JLCC-84 Package
• BK7G18 Glass with N2 Filled Cavity
• 400 mW Power Dissipation
• These Devices are Pb−Free and are RoHS Compliant
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Applications
Standard market Applications
• Nuclear Inspection
Space Applications
• Space Science
• Star Trackers
• Sun Sensors
Figure 1. STAR1000 in 84−Pin Ceramic
JLCC Package
JLDCC84
CASE 114AK
Description
The STAR1000 is a CMOS image sensor with 1024 by 1024 pixels on a 15 mm x 15 mm pitch. It features on-chip Fixed
Pattern Noise (FPN) correction, a programmable gain amplifier, and a 10-bit Analog-to-Digital Converter (ADC).
All circuits are designed using the radiation tolerant design techniques to allow high tolerance against Radiation effects.
Registers which contain the X- and Y- addresses of the read out pixels can be directly accessed by the external controller.
This architecture provides for flexible operation and allows different operation modes such as (multiple) windowing,
subsampling, and so on.
The STAR1000 is assembled using a BK7G18 glass lid with a Nitrogen-filled cavity which increases the temperature
operating range. The STAR1000 flight model has additional screening to space qualified standards.
ORDERING INFORMATION
Marketing Part Number
Description
NOIS1SM1000A-HHC
Mono with BK7G18 Glass, Engineering Model
NOIS1SM1000S-HHC
Mono with BK7G18 Glass, Flight Model
NOIS1SM1000A-HWC
Mono windowless, Engineering Model
NOIS1SM1000S-HWC
Mono windowless, Flight Model
NOIS1SC1000A-HHC
Color with BK7G18 Glass, Engineering Model
Status
Production
Risk Production
Engineering
Package
84 pin JLCC
case 114AK
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 11
1
Publication Order Number:
NOIS1SM1000A/D
Free Datasheet http://www.datasheet4u.com/
NOIS1SM1000S, NOIS1SM1000A
INTRODUCTION
Overview
This specification details the ratings, physical,
geometrical electrical and electro-optical characteristics,
test and inspection data for a CMOS Active Pixel image
Sensor (CMOS APS) based on type STAR 1000. The sensor
has a format of 1024 by 1024 pixels on a 15 mm x 15 mm
pitch, and contains an on-chip 10-bit ADC.
This specification shall be read in conjunction with the
ESCC generic specification ESCC 9020 issue 2 dated March
2010.
Export Clearance
The STAR1000 is subject to export clearance for some
countries and applications, and an export license might be
required.
Component Type Variants
A summary of the type variants of the basic CMOS image
sensor is shown in the ordering information. The complete
list of detailed specifications for each type option is listed in
the acceptance criteria specification.
All specifications presented in this datasheet are rated at
22 ±3°C, under nominal clocking and bias conditions.
Exceptions are noted in the ‘remarks’ field.
Soldering instructions
Soldering is restricted to manual soldering only. No wave
or reflow soldering is allowed. For the manual soldering,
following restrictions are applicable:
• Solder 1 pin on each of the 4 sides of the sensor
• Cool down period of min. 1 minute before soldering
another pin on each of the 4 sides
• Repeat soldering of 1 pin on each side, including a
1 minute cool down period.
Handling precautions
The component is susceptible to damage by electro-static
discharge. Therefore, suitable precautions shall be
employed for protection during all phases of manufacture,
testing, packaging, shipment and any handling. The
following guidelines are applicable:
• Always manipulate the devices in an ESD controlled
environment
• Always store the devices in a shielded environment that
protects against ESD damage (at least a non-ESD
generating tray and a metal bag)
• Always wear a wrist strap when handling the devices
and use ESD safe gloves.
The STAR1000 is classified as class 1A (JEDEC
classification – [AD03]) device for ESD sensitivity.
For proper handling and storage conditions, refer to
ON Semiconductor application note AN52561, Image
Sensor Handling and Best Practices.
Storage information
The components must be stored in a dust-free and
temperature-, humidity and ESD controlled environment.
• Devices must always be stored in special ESD-safe
trays such that the glass window is never touched.
• The trays are closed with EDS-safe rubber bands
• The trays are sealed in an ESD-safe conductive foil in
clean room conditions.
• For transport and storage outside a clean room the trays
are packed in a second ESD-save bag that is sealed in
clean room.
Limited Warranty
ON Image Sensor Business Unit warrants that the image
sensor products to be delivered hereunder, if properly used
and serviced, will conform to Seller’s published
specifications and will be free from defects in material and
workmanship for two (2) years following the date of
shipment. If a defect were to manifest itself within two (2)
years period from the sale date, ON Semiconductor will
either replace the product or give credit for the product.
Return Material Authorization (RMA)
ON Semiconductor packages all of its image sensor
products in a clean room environment under strict handling
procedures and ships all image sensor products in ESD-safe,
clean-room-approved shipping containers. Products
returned to ON Semiconductor for failure analysis should be
handled under these same conditions and packed in its
original packing materials, or the customer may be liable for
the product.
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4
Free Datasheet http://www.datasheet4u.com/
4페이지 NOIS1SM1000S, NOIS1SM1000A
Lot Acceptance and Screening
Lot acceptance and screening are based on the ESA basic
specification ESCC 9020.
This paragraph describes the LAT and screening for the
STAR1000 flight model devices.
Table 1. WAFER LOT ACCEPTANCE (on every fab lot)
Test
Test Method
Number of Devices
Wafer processing
data review
PID
NA
SEM
ESCC 21400
4 devices
Total dose test
ESCC 22900
3 devices
Test Condition
NA
NA
See below
Endurance test
MIL-STD-883 Method 1005
6 devices
See below
Test Location
ON Semiconductor
Test House
Test House by
ON Semiconductor
Test House
Total dose test conditions performed on unscreened devices:
• NOIS1SM1000S-HHC 100KRad at 3.6 Krad/hour
max dose rate, and biased
Endurance test conditions performed on unscreened devices:
• NOIS1SM1000S-HHC 2000h, biased at +125°C
Following tests will be performed before and after total dose testing and endurance tests.
Table 2. ASSEMBLY LOT ACCEPTANCE
Test
Test Method
Special assembly house in
process control
Bond strength test
Assembly house geometrical data
Solderability
Terminal strength
Marking permanence
Geometrical measurements
Temperature cycling
MIL-STD-883 method 2011
Review
MIL-STD883, method 2003
MIL-STD 883, method 2004
ESCC 24800
ICD
MIL-STD 883, method 1010
Moisture resistance
DPA
Die shear test
Bond pull test
JEDEC STD Method 1018.3
MIL-STD-883 method 2019
MIL-STD-883 method 2011
Number of
Devices
Test Condition
2D
All
3D
All
5B
50 Cycles
–55°C/+125°C
2 Procedure 1
4 N/A
All wires
Test Location
Assembly House
Assembly House
ON SEMI
Test House
ON SEMI
Test House
Test House
Test House
Test House
Before and after the following tests are done:
• Electrical testing at high, low and room temperature.
This testing is performed in accordance with the ICD.
• Detailed visual inspection in accordance with CISP#
spec 001-49283
• Fine Leak test MIL-STD-883, Test Method 1014,
Condition A
♦ Pass condition is < 5 x 10-7 atms. cm3/s
• Gross Leak test MIL-STD-883, Test Method 1014,
Condition C
♦ Pass condition is no bubbles visible during test
NOTE: As the glass lid needs to be removed in order to
perform the DPA, this test cannot be guaranteed to be
100% successful.
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7
Free Datasheet http://www.datasheet4u.com/
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부품번호 | 상세설명 및 기능 | 제조사 |
NOIS1SM1000A | 1M Pixel Radiation Hard CMOS Image Sensor | ON Semiconductor |
NOIS1SM1000S | 1M Pixel Radiation Hard CMOS Image Sensor | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |