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PDF NVF6P02 Data sheet ( Hoja de datos )
| Número de pieza | NVF6P02 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTF6P02, NVF6P02
Power MOSFET
-10 Amps, -20 Volts
P−Channel SOT−223
Features
• Low RDS(on)
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Management in Portables and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
−20
Gate−to−Source Voltage
VGS ±8.0
Drain Current (Note 1)
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Single Pulse (tp = 10 ms)
ID −10
ID −8.4
IDM −35
Total Power Dissipation @ TA = 25°C
PD 8.3
Operating and Storage Temperature Range TJ, Tstg
−55 to
+150
Unit
Vdc
Vdc
Adc
Apk
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = −20 Vdc, VGS = −5.0 Vdc,
IL(pk) = −10 A, L = 3.0 mH, RG = 25W)
EAS
150 mJ
Thermal Resistance
− Junction to Lead (Note 1)
− Junction to Ambient (Note 2)
− Junction to Ambient (Note 3)
RqJL
RRqqJJAA
°C/W
15
71.4
160
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Steady State.
2. When surface mounted to an FR4 board using 1” pad size,
(Cu. Area 1.127 sq in), Steady State.
3. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu. Area 0.412 sq in), Steady State.
http://onsemi.com
−10 AMPERES
−20 VOLTS
RDS(on) = 44 mW (Typ.)
S
G
D
P−Channel MOSFET
MARKING DIAGRAM
& PIN ASSIGNMENT
4
1
23
SOT−223
CASE 318E
STYLE 3
Drain
4
AYW
6P02G
G
1 23
Gate Drain Source
A = Assembly Location
Y = Year
W = Work Week
6P02 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTF6P02T3G
SOT−223
(Pb−Free)
4000 / Tape &
Reel
NVF6P02T3G*
SOT−223
(Pb−Free)
4000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 6
1
Publication Order Number:
NTF6P02T3/D
Free Datasheet http://www.datasheet4u.com/
1 page  
NTF6P02, NVF6P02
TYPICAL ELECTRICAL CHARACTERISTICS
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E-03
1.0E-02
NORMALIZED TO RqJA AT STEADY STATE (1″ PAD)
0.0175 W 0.0710 W 0.2706 W 0.5779 W 0.7086 W
CHIP
JUNCTION 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
AMBIENT
1.0E-01
1.0E+00
t, TIME (s)
1.0E+01
Figure 11. FET Thermal Response
1.0E+02
1.0E+03
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVF6P02.PDF ] | |
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