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PDF NVMFS5834NL Data sheet ( Hoja de datos )
| Número de pieza | NVMFS5834NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS5834NL,
NVMFS5834NL
Power MOSFET
40 V, 75 A, 9.3 mW, Single N−Channel
Features
• Low RDS(on)
• Low Capacitance
• Optimized Gate Charge
• NVMF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
40
±20
14
12
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TA = 25°C
TA = 100°C
TC = 25°C
TC = 100°C
PD
ID
3.6
2.5
75
63
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TC = 100°C
tp = 10 ms
PD
IDM
107
75
276
Unit
V
V
A
W
A
W
A
Operating Junction and Storage
Temperature
TJ, TSTG −55 to
+175
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
IS
EAS
IAS
75 A
48 mJ
31 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Bottom) (Note 1)
Junction−to−Case (Top) (Note 1)
Junction−to−Ambient Steady State
(Note 1)
RqJC
RqJC
RqJA
1.4
4.5
41 °C/W
Junction−to−Ambient Steady State
(Note 2)
RqJA
75
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
9.3 mW @ 10 V
13.6 mW @ 4.5 V
ID MAX
75 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 5834L
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS5834NLT1G DFN5 1500/Tape & Reel
(Pb−Free)
NVMFS5834NLT1G DFN5 1500/Tape & Reel
(Pb−Free)
NVMFS5834NLT3G DFN5 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 2
1
Publication Order Number:
NTMFS5834NL/D
Free Datasheet http://www.datasheet4u.com/
1 page  
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10 0.2
0.1
1 0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
1
10 100 1000
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVMFS5834NL.PDF ] | |
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